The RF Line

NPN Silicon RF Low Power Transistor

Designed primarily for wideband large signal predriver stages in the VHF frequency range.

• Specified @ 12.5 V, 175 MHz Characteristics

Output Power = 1.5 W

Minimum Gain = 11.5 dB

Efficiency 60 (Typ)

• Cost Effective PowerMacro Package

• Electroless Tin Plated Leads for Improved Solderability

• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.