RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50 • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Sold

封装/外壳：微型-X 陶瓷 84C 包装：卷带（TR） 描述：RF TRANS NPN 16V 870MHZ MICRO X 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

RF/Microwave Si BJT Power Devices & Pallets

包装：带 描述：RF TRANS NPN 16V 870MHZ 分立半导体产品 晶体管 - 双极（BJT）- 射频

Low Noise Transistors

Low Noise Transistors PNP Silicon

Low Noise Transistors

Low Noise Transistors PNP Silicon

Low Noise Transistors

Low Noise Transistors PNP Silicon

Low Noise Transistors

Low Noise Transistors PNP Silicon

Low Noise Transistors

Low Noise Transistors PNP Silicon