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MRF151价格
参考价格：￥272.2487
型号：MRF151 品牌：M/A-Com 备注：这里有MRF151多少钱，2025年最近7天走势，今日出价，今日竞价，MRF151批发/采购报价，MRF151行情走势销售排行榜，MRF151报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF151 | N-CHANNEL BROADBAND RF POWER MOSFET The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast | Motorola 摩托罗拉 |   | |
MRF151 | N-CHANNEL BROADBAND RF POWER MOSFET 文件：215.08 Kbytes Page：8 Pages | MACOM | | |
MRF151 | RF Power Field-Effect Transistor 文件：350.77 Kbytes Page：8 Pages | MA-COM | | |
MRF151 | RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET 文件：350.77 Kbytes Page：8 Pages | MA-COM | | |
MRF151 | 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF N-CH 150W 50V 175MHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 175 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portabl | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 175 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portabl | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier appli | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common | Motorola 摩托罗拉 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12. | Motorola 摩托罗拉 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12. | Motorola 摩托罗拉 | | ||
The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12. | Motorola 摩托罗拉 | | ||
The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET | MACOM | | ||
RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Features • Enhanced ther | MA-COM | | ||
RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. | ASI | | ||
N-CHANNEL BROADBAND RF POWER MOSFET The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas | MACOM | | ||
N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P | Motorola 摩托罗拉 | | ||
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Features Guaranteed Perf | MA-COM | | ||
RF Power Field-Effect Transistor 文件：350.77 Kbytes Page：8 Pages | MA-COM | | ||
RF Power Field-Effect Transistor 文件：845.02 Kbytes Page：10 Pages | MA-COM | | ||
RF Power Field Effect Transistor 文件：509.94 Kbytes Page：16 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：476.46 Kbytes Page：16 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：509.94 Kbytes Page：16 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：PLD-1.5 包装：托盘 描述：FET RF 40V 520MHZ PLD-1.5 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistor 文件：476.46 Kbytes Page：16 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：509.94 Kbytes Page：16 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：285.38 Kbytes Page：16 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：285.38 Kbytes Page：16 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：285.38 Kbytes Page：16 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：725.56 Kbytes Page：19 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：725.56 Kbytes Page：19 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：717.93 Kbytes Page：18 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：717.93 Kbytes Page：18 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：725.56 Kbytes Page：19 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：727.76 Kbytes Page：20 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET 文件：351.16 Kbytes Page：8 Pages | MA-COM | | ||
RF Power Field-Effect Transistor 文件：351.16 Kbytes Page：8 Pages | MA-COM | | ||
RF Power Field-Effect Transistor 文件：818.8 Kbytes Page：9 Pages | MA-COM | | ||
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET 文件：405 Kbytes Page：9 Pages | MA-COM | | ||
RF Power Field-Effect Transistor 文件：405 Kbytes Page：9 Pages | MA-COM | | ||
RF Power Field-Effect Transistor 文件：883.61 Kbytes Page：10 Pages | MA-COM | | ||
SHIELDED SMT POWER INDUCTORS ● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment | PRODUCTWELL | | ||
RENESAS MCU 文件：829.49 Kbytes Page：121 Pages | RENESAS 瑞萨 | | ||
Silicon Controlled Rectifier 文件：179.34 Kbytes Page：3 Pages | Microsemi 美高森美 | | ||
INTERCONNECT BATTERY HOLDERS 文件：355.08 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
Easy Identification and Tracing with 10-color Cable 文件：578.7 Kbytes Page：1 Pages | ARIES Aries Electronics,inc | |
MRF151产品属性
- 类型
描述
- 型号
MRF151
- 功能描述
射频MOSFET电源晶体管 5-175MHz 150Watts 50Volt Gain 18dB
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MACOM |
22+23+ |
Tray |
8000 |
新到现货，只做原装进口 |
|||
MACOM |
19+ |
高频管 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
M/A-COM |
24+ |
TO-59 |
320 |
价格优势 |
|||
M/A- COM |
24+ |
TO-62 |
300 |
M/A-COM专营品牌绝对进口原装假一赔十 |
|||
M/A-COM |
21+ |
VQFN |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
MOTOROLA |
24+ |
TO-59 |
9630 |
我们只做原装正品现货!量大价优! |
|||
MOTOROLA/摩托罗拉 |
23+ |
TO-59 |
1200 |
全新原装现货,价格优势 |
|||
Freescale(飞思卡尔) |
24+ |
标准封装 |
6693 |
我们只是原厂的搬运工 |
|||
M/A-COM |
22+ |
NA |
5000 |
只做原装,价格优惠,长期供货。 |
|||
M/A-COM |
20+ |
NA |
5000 |
全新原装现货,一片也是批量价。 |
MRF151规格书下载地址
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