MRF151价格
参考价格：￥272.2487
型号：MRF151 品牌：M/A-Com 备注：这里有MRF151多少钱，2026年最近7天走势，今日出价，今日竞价，MRF151批发/采购报价，MRF151行情走势销售排行榜，MRF151报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF151 | N-CHANNEL BROADBAND RF POWER MOSFET The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast | MOTOROLA 摩托罗拉 |   | |
MRF151 | N-CHANNEL BROADBAND RF POWER MOSFET 文件：215.08 Kbytes Page：8 Pages | MACOM | | |
MRF151 | 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF N-CH 150W 50V 175MHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
MRF151 | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Transistor | ASI Semiconductor | | |
MRF151 | N-CHANNEL BROADBAND RF POWER MOSFET | ETC 知名厂家 | ETC | |
MRF151 | RF MOSFET | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MRF151 | RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET 文件：350.77 Kbytes Page：8 Pages | MA-COM | | |
MRF151 | RF Power Field-Effect Transistor 文件：350.77 Kbytes Page：8 Pages | MA-COM | | |
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 175 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portabl | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5 | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 175 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portabl | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5 | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5 | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier appli | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common | MOTOROLA 摩托罗拉 | | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12. | MOTOROLA 摩托罗拉 | | ||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12. | MOTOROLA 摩托罗拉 | | ||
The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12. | MOTOROLA 摩托罗拉 | | ||
The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET | MACOM | | ||
RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Features • Enhanced ther | MA-COM | | ||
RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. | ASI | | ||
N-CHANNEL BROADBAND RF POWER MOSFET The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas | MACOM | | ||
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Features Guaranteed Perf | MA-COM | | ||
N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P | MOTOROLA 摩托罗拉 | | ||
RF Power Field-Effect Transistor 文件：350.77 Kbytes Page：8 Pages | MA-COM | | ||
RF Power Field-Effect Transistor 文件：845.02 Kbytes Page：10 Pages | MA-COM | | ||
RF Power Field Effect Transistor 文件：509.94 Kbytes Page：16 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：509.94 Kbytes Page：16 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：476.46 Kbytes Page：16 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：PLD-1.5 包装：托盘 描述：FET RF 40V 520MHZ PLD-1.5 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistor 文件：476.46 Kbytes Page：16 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：509.94 Kbytes Page：16 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：285.38 Kbytes Page：16 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：285.38 Kbytes Page：16 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：285.38 Kbytes Page：16 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：725.56 Kbytes Page：19 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：725.56 Kbytes Page：19 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：717.93 Kbytes Page：18 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：717.93 Kbytes Page：18 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：725.56 Kbytes Page：19 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：727.76 Kbytes Page：20 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET 文件：351.16 Kbytes Page：8 Pages | MA-COM | | ||
RF Power Field-Effect Transistor 文件：351.16 Kbytes Page：8 Pages | MA-COM | | ||
RF Power Field-Effect Transistor 文件：818.8 Kbytes Page：9 Pages | MA-COM | | ||
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET 文件：405 Kbytes Page：9 Pages | MA-COM | | ||
RF Power Field-Effect Transistor 文件：405 Kbytes Page：9 Pages | MA-COM | | ||
RF Power Field-Effect Transistor 文件：883.61 Kbytes Page：10 Pages | MA-COM | | ||
DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes) VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228 | PANJIT 強茂 | | ||
POWER TRANSISTORS(7A,300-400V,80W) NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V | MOSPEC 统懋 | | ||
GaAs Infrared Light Emitting Diodes 文件：40.94 Kbytes Page：2 Pages | PANASONIC 松下 | |
MRF151产品属性
- 类型
描述
- Min Frequency(MHz)：
5
- Max Frequency(MHz)：
175
- Bias Voltage(V)：
50.0
- Pout(W)：
150.00
- Gain(dB)：
13.00
- Efficiency(%)：
40
- Type：
TMOS
- Package：
Flange Ceramic Pkg
- Package Category：
Ceramic Flange Mount
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Freescale(飞思卡尔) |
24+ |
SMD |
532 |
原厂直供,支持账期,免费供样,技术支持 |
|||
LINER |
23+ |
MSOP-8 |
12000 |
全新原装假一赔十 |
|||
MACOM |
19+ |
高频管 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MACOM |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
M/A-COM |
25+ |
TO-59 |
20000 |
原装 |
|||
恩XP |
TO-59 |
50000 |
|||||
MOTOROLA/摩托罗拉 |
25+ |
TO-59 |
1200 |
全新原装现货,价格优势 |
|||
MACOM |
25+ |
TO-59 |
2100 |
绝对原装公司现货！ |
|||
MOTO |
14+ |
高频管 |
6680 |
上海鑫科润电子,大量原装进口现货,特价销售。您的IC私人顾问,可开17%增值税发票,欢迎致电18916238831 |
|||
MACOM |
24+ |
Tray |
25836 |
新到现货，只做全新原装正品 |
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