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MRF1511NT1价格
参考价格:¥32.0894
型号:MRF1511NT1 品牌:Freescale 备注:这里有MRF1511NT1多少钱,2025年最近7天走势,今日出价,今日竞价,MRF1511NT1批发/采购报价,MRF1511NT1行情走势销售排行榜,MRF1511NT1报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MRF1511NT1 | RF Power Field Effect Transistor RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | ||
MRF1511NT1 | RF Power Field Effect Transistor 175 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portabl | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | ||
MRF1511NT1 | RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | ||
MRF1511NT1 | RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | ||
MRF1511NT1 | 封装/外壳:PLD-1.5 包装:托盘 描述:FET RF 40V 175MHZ PLD-1.5 分立半导体产品 晶体管 - FET,MOSFET - 射频 | ETC 知名厂家 | ETC | |
RF Power Field Effect Transistor 175 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portabl | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | |||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |
MRF1511NT1产品属性
- 类型
描述
- 型号
MRF1511NT1
- 功能描述
射频MOSFET电源晶体管 RF LDMOS FET PLD1.5N
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FREESCALE |
24+ |
311 |
现货供应 |
||||
FREESCALE |
24+ |
SMD |
1680 |
FREESCALE专营品牌进口原装现货假一赔十 |
|||
Freescale(飞思卡尔) |
24+ |
标准封装 |
6693 |
我们只是原厂的搬运工 |
|||
恩XP |
25+ |
UNKN |
2000 |
原厂原装,价格优势 |
|||
恩XP |
1708+ |
? |
11520 |
只做原装进口,假一罚十 |
|||
FREESCALE |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
恩XP |
22+ |
PLD1.5 |
9000 |
原厂渠道,现货配单 |
|||
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FREESCALE |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
|||
MOTOROLA/摩托罗拉 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
MRF1511NT1规格书下载地址
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