RF FIELD-EFFECT POWER TRANSISTOR

DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications.

RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Features Guaranteed Perf

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

300 W, 50 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET

1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ·Guaranteed Performance at 175 MHz, 50 V:\n·Nitride Passivated Die for Enhanced Reliability\n·Ruggedness Tested at Rated Output Power\n·Low Thermal Resistance — 0.35°C/W\n·Efficiency — 50%\n·Gain — 14 dB (16 dB Typ)\n·Output Power — 300 W;

封装/外壳：375-04 包装：托盘 描述：FET RF 2CH 125V 175MHZ 375-04 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF FIELD-EFFECT POWER TRANSISTOR

RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

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RF Power Field-Effect Transistor

文件：405 Kbytes Page：9 Pages

RF Power Field-Effect Transistor

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N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

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