N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

RF FIELD-EFFECT POWER TRANSISTOR

DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications.

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Features Guaranteed Perf

RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

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封装/外壳：375-04 包装：托盘 描述：FET RF 2CH 125V 175MHZ 375-04 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field-Effect Transistor

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RF Power Field-Effect Transistor

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SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

RENESAS MCU

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Silicon Controlled Rectifier

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INTERCONNECT BATTERY HOLDERS

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Easy Identification and Tracing with 10-color Cable

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