Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V

RF Power Field Effect Transistor

文件：509.94 Kbytes Page：16 Pages

RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5

RF Power Field Effect Transistor

文件：476.46 Kbytes Page：16 Pages

封装/外壳：PLD-1.5 包装：托盘 描述：FET RF 40V 520MHZ PLD-1.5 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistor

文件：509.94 Kbytes Page：16 Pages

RF Power Field Effect Transistor

文件：476.46 Kbytes Page：16 Pages

RF Power Field Effect Transistor

文件：509.94 Kbytes Page：16 Pages

Integrated Circuit 9-Step LED Driver Circuit for Logarithmic Scale

Functions: • Indication Way: Indicates input level in a series bar by 9 red or green LED’s • Input Amp: DC amp installed the aim of which can be varied by a peripheral resistor. • Comparator Level: Designed with 3dB rate; –18dB, –15dB, –12dB, –9dB, –6dB, –3dB

PHOTOMULTIPLIER TUBE

PHOTOMULTIPLIER TUBE Multialkali Photocathode with S-20 Spectral Response 127mm (5 Inch) Diameter, 10-Stage, Head-On Type

SEPIC Constant- or Programmable-Current/ Constant-Voltage Battery Charger

文件：299.75 Kbytes Page：16 Pages

SEPIC Constant- or Programmable-Current/ Constant-Voltage Battery Charger

文件：299.75 Kbytes Page：16 Pages

SEPIC Constant- or Programmable-Current/ Constant-Voltage Battery Charger

文件：299.75 Kbytes Page：16 Pages