RF Power Field Effect Transistor

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RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

RF Power Field Effect Transistor

文件：285.38 Kbytes Page：16 Pages

封装/外壳：PLD-1.5 包装：卷带（TR） 描述：FET RF 25V 520MHZ PLD-1.5 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistor

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LINEAR INTEGRATED CIRCUIT

2×6 W stereo power amplifier DESCRIPTION The CD1517 is an integrated class-B dual output amplifier in a plastic single inline medium power package with fin and a plastic heatdissipating dual inlinepackage. The device is primarily developed for multimedia applications. FEATURES - Requir

Original Strain Relief Bushings

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Premier Supplier of Electronic Hardware

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5-TAP DIP DELAY LINE

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5-TAP DIP DELAY LINE TD/TR = 3

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