Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 7.5 V

RF Power Field Effect Transistor

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RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

封装/外壳：PLD-1.5 包装：卷带（TR） 描述：FET RF 25V 520MHZ PLD-1.5 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistor

文件：285.38 Kbytes Page：16 Pages

RF Power Field Effect Transistor

文件：285.38 Kbytes Page：16 Pages

2 x 6 W stereo power amplifier

GENERAL DESCRIPTION The TDA1517 is an integrated class-B dual output amplifier in a plastic single in-line medium power package with fin (SIL9MPF), a plastic rectangular-bent single in-line medium power package with fin (RBS9MPF) or a plastic heat-dissipating dual in-line package (HDIP18). The

8 W BTL or 2 x 4 W SE power amplifier

GENERAL DESCRIPTION The TDA1517ATW is an integrated class-AB output amplifier contained in a plastic heatsink thin shrink small outline package (HTSSOP20). The device is primarily developed for multimedia applications. FEATURES • Requires very few external components • Flexibility in

8 W BTL or 2 x 4 W SE power amplifier

GENERAL DESCRIPTION The TDA1517ATW is an integrated class-AB output amplifier contained in a plastic heatsink thin shrink small outline package (HTSSOP20). The device is primarily developed for multimedia applications. FEATURES • Requires very few external components • Flexibility in

2 x 6 W stereo power amplifier

GENERAL DESCRIPTION The TDA1517 is an integrated class-B dual output amplifier in a plastic single in-line medium power package with fin (SIL9MPF), a plastic rectangular-bent single in-line medium power package with fin (RBS9MPF) or a plastic heat-dissipating dual in-line package (HDIP18). The

6-W STEREO AUDIO POWER AMPLIFIER

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