The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET

Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Features • Enhanced ther

RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET

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封装/外壳：P-244 包装：散装 描述：FET RF N-CH 50V 150W P-244 分立半导体产品 晶体管 - FET，MOSFET - 射频

MOSFET

RF Power Field-Effect Transistor

文件：351.16 Kbytes Page：8 Pages

RF Power Field-Effect Transistor

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SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

RENESAS MCU

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Silicon Controlled Rectifier

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INTERCONNECT BATTERY HOLDERS

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Easy Identification and Tracing with 10-color Cable

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