RF Power Field Effect Transistor

N−Channel Enhancement−Mode Lateral MOSFET

Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5 volt portable FM equipment.

• Specified Performance @ 175 MHz, 7.5 Volts

Output Power — 8 Watts

Power Gain — 11.5 dB

Efficiency — 55

• Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 175 MHz, 2 dB Overdrive

• Excellent Thermal Stability

• Characterized with Series Equivalent Large−Signal Impedance Parameters

• Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request

• RF Power Plastic Surface Mount Package

• N Suffix Indicates Lead−Free Terminations

• Available in Tape and Reel.

T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.