POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE(sat) of 2 V at IC = 5 A ● ICEX(sus) 7 A at rated V(BR)CEO

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON APPLICATIONS • For use in automotive ignition,switching and motor control applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON APPLICATIONS • For use in automotive ignition,switching and motor control applications

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE(sat) of 2 V at IC = 5 A ● ICEX(sus) 7 A at rated V(BR)CEO

Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) • Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A APPLICATIONS • Designed for use in automotive ignition,switching and motor control applications.

NPN SILICON POWER DARLINGTONS

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DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

GaAs Infrared Light Emitting Diodes

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