RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment.

• Specified Performance @ 520 MHz, 12.5 Volts

Output Power — 3 Watts

Power Gain — 15 dB

Efficiency — 65

• Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.