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IRFZ48价格
参考价格：￥2.3220
型号：IRFZ48NPBF 品牌：INTERNATIONAL 备注：这里有IRFZ48多少钱，2025年最近7天走势，今日出价，今日竞价，IRFZ48批发/采购报价，IRFZ48行情走势销售排行榜，IRFZ48报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFZ48 | N-channel enhancement mode TrenchMOS transistor N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and genera | Philips 飞利浦 |   | |
IRFZ48 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A) Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | |
IRFZ48 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VishayVishay Siliconix 威世威世科技公司 | | |
IRFZ48 | Power MOSFET 文件：1.52086 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFZ48 | Power MOSFET 文件：1.52086 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFZ48 | isc N-Channel MOSFET Transistor 文件：310.54 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFZ48 | Power MOSFET 文件：574.58 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFZ48 | N-channel enhancement mode TrenchMOS transistor | ETC 知名厂家 | ETC | |
IRFZ48 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFZ48 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A) | Infineon 英飞凌 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Ch 60V Fast Switching MOSFETs Super Low Gate Charge 100 EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology | EVVOSEMI 翊欧 | | ||
Advanced Process Technology Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides | SYC | | ||
N-channel enhancement mode TrenchMOS transistor N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and genera | Philips 飞利浦 | | ||
isc N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤14mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio | ISC 无锡固电 | | ||
HEXFET Power MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr | IRF | | ||
Fast Switching DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 64A@ TC=25℃ • Drain Source Voltage- : VDSS= 55V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.014Ω (Max) • Fast Switching | KERSEMI | | ||
Advanced Process Technology Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
HEXFET Power MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr | IRF | | ||
N-Channel 60 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • Fast Switching • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
Advanced Process Technology Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
Advanced Process Technology Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter | KERSEMI | | ||
isc N-Channel MOSFET Transistor • FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi | ISC 无锡固电 | | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
N-Channel 60-V (D-S) MOSFET FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET | VBSEMI 微碧半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A) Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr | IRF | | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A ) Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr | IRF | | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET짰 Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr | IRF | | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Advanced process technology • Dynamic dV/dt • 175 °C operating temperature • Fast switching • Fully avalanche rated • Drop in replacement of the IRFZ48, SiHFZ48 for linear / audio applications • Material categorization: for definitions of compliance please see www.vishay.com/do | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Advanced process technology • Dynamic dV/dt • 175 °C operating temperature • Fast switching • Fully avalanche rated • Drop in replacement of the IRFZ48, SiHFZ48 for linear / audio applications • Material categorization: for definitions of compliance please see www.vishay.com/do | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A ) Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr | IRF | | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Advanced process technology • Surface-mount (IRFZ48S, SiHFZ48S) • Low-profile through-hole (SiHFZ48L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Advanced process technology • Surface-mount (IRFZ48S, SiHFZ48S) • Low-profile through-hole (SiHFZ48L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A) Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
Advanced Process Technology Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A) Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
HEXFET짰 Power MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
AUTOMOTIVE MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
AUTOMOTIVE MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
AUTOMOTIVE MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
Power MOSFET 文件：1.52086 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：574.58 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：364.07 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET 文件：718.17 Kbytes Page：8 Pages | ARTSCHIP | |
IRFZ48产品属性
- 类型
描述
- 型号
IRFZ48
- 制造商
Vishay Angstrohm
- 功能描述
Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220AB
- 制造商
Vishay Semiconductors
- 功能描述
TRANS MOSFET N-CH 60V 50A 3PIN TO-220AB - Bulk
- 制造商
NULL
- 功能描述
Vishay Intertechnology IRFZ48 MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
68250 |
原装现货,当天可交货,原型号开票 |
|||
CET |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
25+ |
TO-220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
25+23+ |
TO-220 |
30030 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
45000 |
IR全新现货IRFZ48NS即刻询购立享优惠#长期有排单订 |
|||
IR |
24+ |
TO-220AB |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
|||
IR |
23+ |
TO-220 |
16000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INFINEON |
23+ |
TO220 |
18000 |
正规渠道,只有原装! |
|||
IR |
24+ |
TO-220 |
5000 |
||||
IR |
2450+ |
TO-220 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
IRFZ48规格书下载地址
IRFZ48参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRH3230
- IRH3150
- IRH3054
- IRGPH50
- IRGPH40
- IRGPH20
- IRGPC40
- IRGBF30
- IRGBF20
- IRGBC40
- IRGBC30
- IRGBC20
- IRGB430
- IRGB420
- IRG4BC20KD-SPBF
- IRG4BC20KDPBF
- IRG4BC20FPBF
- IRG4BC20FDPBF
- IRG4BC15UD-SPBF
- IRG4BC15UDPBF
- IRG4BC15UD-LPBF
- IRG4BC10UDPBF
- IRG4BC10KPBF
- IRG4BC10KDPBF
- IRFZ48ZSPBF
- IRFZ48Z
- IRFZ48VSPBF
- IRFZ48VPBF
- IRFZ48V
- IRFZ48SPBF
- IRFZ48S
- IRFZ48RSPBF
- IRFZ48RPBF
- IRFZ48R
- IRFZ48PBF
- IRFZ48NSTRLPBF
- IRFZ48NSPBF
- IRFZ48NPBF
- IRFZ48N
- IRFZ48L
- IRFZ46ZSTRLPBF
- IRFZ46ZSPBF
- IRFZ46ZPBF
- IRFZ46ZLPBF
- IRFZ46Z
- IRFZ46S
- IRFZ46NSTRLPBF/BKN
- IRFZ46NSTRLPBF
- IRFZ46NPBF
- IRFZ46NLPBF
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44ZSTRRPBF
- IRFZ44ZSPBF
- IRFZ44ZPBF
- IRFZ44ZLPBF
- IRFZ44Z
- IRFZ44VZSPBF
- IRFZ44VZPBF
- IRFZ44VPBF
- IRFZ44V
- IRFZ44STRRPBF
- IRFZ44SPBF
- IRFZ44S
- IRFZ44RPBF
- IRFZ44R
- IRFZ44PBF
- IRFZ44NSTRRPBF
- IRFZ44N
- IRFZ44L
- IRFZ44E
- IRFZ44
- IRFZ42
- IRFZ40
- IRFZ34S
- IRFZ34N
- IRFZ34L
- IRFZ34E
IRFZ48数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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原装正品现货热卖中，焕盛达-专注原装 用芯服务；
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元器件优质供应
2019-11-1
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