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IRFZ48价格
参考价格:¥2.3220
型号:IRFZ48NPBF 品牌:INTERNATIONAL 备注:这里有IRFZ48多少钱,2024年最近7天走势,今日出价,今日竞价,IRFZ48批发/采购报价,IRFZ48行情走势销售排行榜,IRFZ48报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRFZ48 | N-channel enhancement mode TrenchMOS transistor N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowersuppliesandgenera | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
IRFZ48 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFZ48 | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技 | ||
IRFZ48 | Power MOSFET 文件:1.52086 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | ||
IRFZ48 | Power MOSFET 文件:1.52086 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | ||
IRFZ48 | isc N-Channel MOSFET Transistor 文件:310.54 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRFZ48 | Power MOSFET 文件:574.58 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewell knownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 | |||
N-channel enhancement mode TrenchMOS transistor N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowersuppliesandgenera | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
isc N-Channel MOSFET Transistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤14mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperatio | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Fast Switching DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=64A@TC=25℃ •DrainSourceVoltage- :VDSS=55V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.014Ω(Max) •FastSwitching | KERSEMI Kersemi Electronic Co., Ltd. | |||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel 60 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Advanced Process Technology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | |||
isc N-Channel MOSFET Transistor •FEATURES •WithTO-263(D2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel 60-V (D-S) MOSFET FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技 | |||
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET DESCRIPTION AdvancedPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET DESCRIPTION AdvancedPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技 | |||
HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A ) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET DESCRIPTION AdvancedPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技 | |||
HEXFET짰 Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET DESCRIPTION AdvancedPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET DESCRIPTION AdvancedPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技 | |||
Power MOSFET FEATURES •Advancedprocesstechnology •DynamicdV/dt •175°Coperatingtemperature •Fastswitching •Fullyavalancherated •DropinreplacementoftheIRFZ48,SiHFZ48for linear/audioapplications •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/do | VishayVishay Siliconix 威世科技 | |||
Power MOSFET FEATURES •Advancedprocesstechnology •DynamicdV/dt •175°Coperatingtemperature •Fastswitching •Fullyavalancherated •DropinreplacementoftheIRFZ48,SiHFZ48for linear/audioapplications •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/do | VishayVishay Siliconix 威世科技 | |||
HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A ) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET DESCRIPTION AdvancedPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewell knownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 | |||
Power MOSFET FEATURES •Advancedprocesstechnology •Surface-mount(IRFZ48S,SiHFZ48S) •Low-profilethrough-hole(SiHFZ48L) •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技 | |||
Power MOSFET FEATURES •Advancedprocesstechnology •Surface-mount(IRFZ48S,SiHFZ48S) •Low-profilethrough-hole(SiHFZ48L) •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技 | |||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 | |||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 | |||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewell knownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewell knownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewell knownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰 Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewell knownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVE MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewell knownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVE MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewell knownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVE MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewell knownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET 文件:1.52086 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:574.58 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:364.07 Kbytes Page:9 Pages | TFUNKVishay Telefunken 威世威世(VISHAY)集团 | |||
HEXFET Power MOSFET 文件:718.17 Kbytes Page:8 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | |||
Power MOSFET 文件:357.55 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:357.55 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
N-Channel MOSFET Transistor 文件:338.6 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:232.23 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 |
IRFZ48产品属性
- 类型
描述
- 型号
IRFZ48
- 制造商
Vishay Angstrohm
- 功能描述
Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220AB
- 制造商
Vishay Semiconductors
- 功能描述
TRANS MOSFET N-CH 60V 50A 3PIN TO-220AB - Bulk
- 制造商
NULL
- 功能描述
Vishay Intertechnology IRFZ48 MOSFETs
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
21+ |
TO-263 |
25000 |
原装正品价格绝对优势 |
|||
IR |
22+ |
TO-220 |
60 |
原装现货假一赔十 |
|||
IR |
2016+ |
TO220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
IR |
23+ |
TO-220 |
20000 |
全新原装假一赔十 |
|||
INTERNATIONALRECTIFIER |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
21+ |
TO-220 |
900000 |
原装正品现货/订货 价格优惠 |
|||
IR |
TO-263 |
68900 |
原包原标签100%进口原装常备现货! |
||||
VISHAY(威世) |
23+ |
TO-263 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IR/VISHAY |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
Vishay Siliconix |
23+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
IRFZ48规格书下载地址
IRFZ48参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRH3230
- IRH3150
- IRH3054
- IRGPH50
- IRGPH40
- IRGPH20
- IRGPC40
- IRGBF30
- IRGBF20
- IRGBC40
- IRGBC30
- IRGBC20
- IRGB430
- IRGB420
- IRG4BC20KD-SPBF
- IRG4BC20KDPBF
- IRG4BC20FPBF
- IRG4BC20FDPBF
- IRG4BC15UD-SPBF
- IRG4BC15UDPBF
- IRG4BC15UD-LPBF
- IRG4BC10UDPBF
- IRG4BC10KPBF
- IRG4BC10KDPBF
- IRFZ48ZSPBF
- IRFZ48Z
- IRFZ48VSPBF
- IRFZ48VPBF
- IRFZ48V
- IRFZ48SPBF
- IRFZ48S
- IRFZ48RSPBF
- IRFZ48RPBF
- IRFZ48R
- IRFZ48PBF
- IRFZ48NSTRLPBF
- IRFZ48NSPBF
- IRFZ48NPBF
- IRFZ48N
- IRFZ48L
- IRFZ46ZSTRLPBF
- IRFZ46ZSPBF
- IRFZ46ZPBF
- IRFZ46ZLPBF
- IRFZ46Z
- IRFZ46S
- IRFZ46NSTRLPBF/BKN
- IRFZ46NSTRLPBF
- IRFZ46NPBF
- IRFZ46NLPBF
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44ZSTRRPBF
- IRFZ44ZSPBF
- IRFZ44ZPBF
- IRFZ44ZLPBF
- IRFZ44Z
- IRFZ44VZSPBF
- IRFZ44VZPBF
- IRFZ44VPBF
- IRFZ44V
- IRFZ44STRRPBF
- IRFZ44SPBF
- IRFZ44S
- IRFZ44RPBF
- IRFZ44R
- IRFZ44PBF
- IRFZ44NSTRRPBF
- IRFZ44N
- IRFZ44L
- IRFZ44E
- IRFZ44
- IRFZ42
- IRFZ40
- IRFZ34S
- IRFZ34N
- IRFZ34L
- IRFZ34E
IRFZ48数据表相关新闻
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属性参数值 商品目录IGBT管 集电极电流(Ic)(最大值)55A 集射极击穿电压(最大值)600V 类型- 不同Vge,Ic时的Vce(on)2.3V@15V,27A 栅极阈值电压-VGE(th)6V@250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中,焕盛达-专注原装用芯服务;
2020-7-17IRFZ44NPBF选拓亿芯电子,国际电子元器件供应商
元器件优质供应
2019-11-1
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- P80