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位置：首页 > IC中文资料第4663页 > IRFZ48N

IRFZ48N价格

参考价格：￥2.3220

型号：IRFZ48NPBF 品牌：INTERNATIONAL 备注：这里有IRFZ48N多少钱，2026年最近7天走势，今日出价，今日竞价，IRFZ48N批发/采购报价，IRFZ48N行情走势销售排行榜，IRFZ48N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ48N

N-channel enhancement mode TrenchMOS transistor

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and genera

Philips

飞利浦

IRFZ48N

isc N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤14mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio

ISC

无锡固电

IRFZ48N

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ48N

Fast Switching

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 64A@ TC=25℃ • Drain Source Voltage- : VDSS= 55V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.014Ω (Max) • Fast Switching

KERSEMI

IRFZ48N

N-Ch 60V Fast Switching MOSFETs

Super Low Gate Charge 100 EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology

EVVOSEMI

翊欧

IRFZ48N

Advanced Process Technology

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides

SYC

IRFZ48N

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRFZ48N

N-channel enhancement mode TrenchMOS transistor

ETC

知名厂家

IRFZ48N

TO-220 MOS FETs 场效应管

GSME

桂微

IRFZ48N

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

Infineon

英飞凌

IRFZ48NL

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRFZ48NLPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRFZ48NPBF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ48NPBF

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • Fast Switching • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

IRFZ48NS

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRFZ48NS

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

KERSEMI

IRFZ48NS

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

ISC

无锡固电

IRFZ48NSPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRFZ48NSPBF

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET

VBSEMI

微碧半导体

IRFZ48N_18

N-Channel MOSFET Transistor

文件：338.6 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ48NPBF

ADVANCED PROCESS TECHNOLOGY

文件：232.23 Kbytes Page：8 Pages

IRF

IRFZ48NPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：232.23 Kbytes Page：8 Pages

IRF

IRFZ48NSPBF

ADVANCED PROCESS TECHNOLOGY

文件：306.62 Kbytes Page：11 Pages

IRF

IRFZ48NSPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：306.62 Kbytes Page：11 Pages

IRF

IRFZ48NSTRLPBF

ADVANCED PROCESS TECHNOLOGY

文件：306.62 Kbytes Page：11 Pages

IRF

IRFZ48N产品属性

  • 类型

    描述

  • 型号

    IRFZ48N

  • 功能描述

    MOSFET N-CH 55V 64A TO-262

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRFZ48N供应商更多...

更新时间：2026-1-1 20:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市富利微电子科技有限公司
IRFZ48NPBF
IR
24+
TO-220
20540
保证进口原装现货假一赔十
询价
深圳市明嘉莱科技有限公司
IRFZ48N
IR
24+
TO 220
161056
明嘉莱只做原装正品现货
询价
深圳市得捷芯城科技有限公司
IRFZ48NPBF
IR(国际整流器)
24+
N/A
23048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
深圳市恒凯威科技开发有限公司
IRFZ48NPBF
IR
21+
TO-220
6880
只做原装,质量保证
询价
深圳市中联芯电子有限公司
IRFZ48NPBF
IR
24+
TO-220AB
10000
只做原装欢迎含税交易,假一赔十,放心购买
询价
深圳市赛特兴科技有限公司
IRFZ48NPBF
INFINEON
23+
TO220
18000
正规渠道,只有原装!
询价
深圳市高捷芯城科技有限公司
IRFZ48NSTRLPBF
Infineon(英飞凌)
24+
D2PAK
8357
支持大陆交货,美金交易。原装现货库存。
询价
深圳市东来宝电子科技有限公司
IRFZ48NPBF
INFINEON
24+
Tube
75000
郑重承诺只做原装进口现货
询价
深圳市鸿昌盛电子科技有限公司
IRFZ48N
25+
500
公司现货库存
询价
深圳市莱克讯科技有限公司
IRFZ48N
IR
最新
DIP-8
6800
全新原装公司现货低价
询价

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