FEATURES

• Advanced process technology

• Surface-mount (IRFZ48S, SiHFZ48S)

• Low-profile through-hole (SiHFZ48L)

• 175 °C operating temperature

• Fast switching

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

Note

* This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The D2PAK (TO-263) is a surface-mount power package

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and the lowest

possible on-resistance in any existing surface-mount

package. The D2PAK (TO-263)is suitable for high current

applications because of its low internal connection

resistance and can dissipate up to 2 W in a typical

surface-mount application.

The through-hole version (SiHFZ48L) is available for

low-profile applications.