Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

ADVANCED PROCESS TECHNOLOGY

文件：306.62 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：306.62 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：306.62 Kbytes Page：11 Pages