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IRFZ48V价格
参考价格：￥2.2547
型号：IRFZ48VPBF 品牌：International 备注：这里有IRFZ48V多少钱，2026年最近7天走势，今日出价，今日竞价，IRFZ48V批发/采购报价，IRFZ48V行情走势销售排行榜，IRFZ48V报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFZ48V | Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A) Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF |   | |
IRFZ48V | N-Channel MOSFET Transistor 文件：338.89 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFZ48V | HEXFET Power MOSFET 文件：2.99698 Mbytes Page：8 Pages | KERSEMI | | |
IRFZ48V | 采用 TO-220AB 封装的 60V 单 N 通道 HEXFET 功率 MOSFET | INFINEON 英飞凌 | | |
Advanced Process Technology Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A) Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
HEXFET짰 Power MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
Advanced Process Technology 文件：3.10982 Mbytes Page：8 Pages | KERSEMI | | ||
N-Channel 60-V (D-S) MOSFET 文件：1.01445 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
ADVANCED PROCESS TECHNOLOGY 文件：223.81 Kbytes Page：8 Pages | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：223.81 Kbytes Page：8 Pages | IRF | | ||
丝印代码：D2PAK；isc N-Channel MOSFET Transistor 文件：263.85 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
60V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装 | INFINEON 英飞凌 | | ||
ADVANCED PROCESS TECHNOLOGY 文件：184.86 Kbytes Page：10 Pages | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：184.86 Kbytes Page：10 Pages | IRF | |
IRFZ48V产品属性
- 类型
描述
- 型号
IRFZ48V
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
23+ |
TO-220 |
65400 |
||||
IR |
24+/25+ |
50 |
原装正品现货库存价优 |
||||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
2023+ |
TO-220AB |
50000 |
原装现货 |
|||
IR |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-220AB |
8866 |
||||
IR |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
IR |
26+ |
TO-220 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
IRFZ48V规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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原装正品现货热卖中，焕盛达-专注原装 用芯服务；
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元器件优质供应
2019-11-1
DdatasheetPDF页码索引
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