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位置：首页 > IC中文资料第2256页 > IRFZ48R

IRFZ48R价格

参考价格：￥8.8773

型号：IRFZ48RPBF 品牌：Vishay 备注：这里有IRFZ48R多少钱，2025年最近7天走势，今日出价，今日竞价，IRFZ48R批发/采购报价，IRFZ48R行情走势销售排行榜，IRFZ48R报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ48R

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A)

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRFZ48R

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VishayVishay Siliconix

威世威世科技公司

IRFZ48R

Power MOSFET

文件：200.28 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ48R

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

IRFZ48RL

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ48RL

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VishayVishay Siliconix

威世威世科技公司

IRFZ48RLPBF

HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A )

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ48RLPBF

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VishayVishay Siliconix

威世威世科技公司

IRFZ48RPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRFZ48RPBF

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VishayVishay Siliconix

威世威世科技公司

IRFZ48RS

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ48RS

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VishayVishay Siliconix

威世威世科技公司

IRFZ48RS

Power MOSFET

FEATURES • Advanced process technology • Dynamic dV/dt • 175 °C operating temperature • Fast switching • Fully avalanche rated • Drop in replacement of the IRFZ48, SiHFZ48 for linear / audio applications • Material categorization: for definitions of compliance please see www.vishay.com/do

VishayVishay Siliconix

威世威世科技公司

IRFZ48RS_V01

Power MOSFET

FEATURES • Advanced process technology • Dynamic dV/dt • 175 °C operating temperature • Fast switching • Fully avalanche rated • Drop in replacement of the IRFZ48, SiHFZ48 for linear / audio applications • Material categorization: for definitions of compliance please see www.vishay.com/do

VishayVishay Siliconix

威世威世科技公司

IRFZ48RSPBF

HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A )

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ48RSPBF

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VishayVishay Siliconix

威世威世科技公司

IRFZ48R_V01

Power MOSFET

文件：200.28 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ48RL

Power MOSFET

文件：208.55 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ48RL

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

IRFZ48RLPBF

Power MOSFET

文件：208.55 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ48RPBF

Power MOSFET

文件：200.28 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ48RPBF

HEXFET® Power MOSFET

Infineon

英飞凌

IRFZ48RS

Power MOSFET

文件：208.55 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ48RS_11

Power MOSFET

文件：208.55 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ48RSPBF

Power MOSFET

文件：208.55 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ48R产品属性

  • 类型

    描述

  • 型号

    IRFZ48R

  • 功能描述

    MOSFET N-Chan 60V 50 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRFZ48R供应商更多...

更新时间：2025-11-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
IRFZ48R
IR
24+
NA/
13888
优势代理渠道,原装正品,可全系列订货开增值税票
询价
贸泽芯城（深圳）电子科技有限公司
IRFZ48RLPbF
VISHAY/威世
23+
TO-262AA
62003
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
中天科工半导体（深圳）有限公司
IRFZ48R
IR
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
询价
深圳市一线半导体有限公司
IRFZ48R
IR
24+
TO-220AB
8866
询价
深圳市高捷芯城科技有限公司
IRFZ48RPBF
VISHAY(威世)
24+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
询价
上海金庆电子技术有限公司
IRFZ48RPBF
VishayPCS
新
5
全新原装 货期两周
询价
深圳市河锋鑫科技有限公司
IRFZ48R
Vishay Siliconix
22+
TO2203
9000
原厂渠道,现货配单
询价
天津市博通航睿技术有限公司
IRFZ48R
IR
23+
TO-220
7000
询价
艾睿（深圳）半导体有限公司
IRFZ48RPBF
VISHAY/威世
2447
TO220AB
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
富凯科技(深圳）有限公司
IRFZ48R
NCE/新洁能
24+
TO-220C
50000
只做原装，欢迎询价，量大价优
询价

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IRFZ48R规格书下载地址

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IRFZ48R数据表相关新闻

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