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位置：首页 > IC中文资料第2256页 > IRFZ48R

IRFZ48R价格

参考价格：￥8.8773

型号：IRFZ48RPBF 品牌：Vishay 备注：这里有IRFZ48R多少钱，2026年最近7天走势，今日出价，今日竞价，IRFZ48R批发/采购报价，IRFZ48R行情走势销售排行榜，IRFZ48R报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ48R

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A)

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRFZ48R

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48R

Power MOSFET

文件：200.28 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48R

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48RL

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ48RL

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48RLPBF

HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A )

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ48RLPBF

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48RPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRFZ48RPBF

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48RS

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ48RS

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48RS

Power MOSFET

FEATURES • Advanced process technology • Dynamic dV/dt • 175 °C operating temperature • Fast switching • Fully avalanche rated • Drop in replacement of the IRFZ48, SiHFZ48 for linear / audio applications • Material categorization: for definitions of compliance please see www.vishay.com/do

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48RS_V01

Power MOSFET

FEATURES • Advanced process technology • Dynamic dV/dt • 175 °C operating temperature • Fast switching • Fully avalanche rated • Drop in replacement of the IRFZ48, SiHFZ48 for linear / audio applications • Material categorization: for definitions of compliance please see www.vishay.com/do

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48RSPBF

HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A )

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ48RSPBF

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48R_V01

Power MOSFET

文件：200.28 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48RL

Power MOSFET

文件：208.55 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48RL

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48RLPBF

Power MOSFET

文件：208.55 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48RPBF

Power MOSFET

文件：200.28 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48RPBF

HEXFET® Power MOSFET

INFINEON

英飞凌

IRFZ48RS

Power MOSFET

文件：208.55 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48RS_11

Power MOSFET

文件：208.55 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48RSPBF

Power MOSFET

文件：208.55 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ48R产品属性

  • 类型

    描述

  • 型号

    IRFZ48R

  • 功能描述

    MOSFET N-Chan 60V 50 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRFZ48R供应商更多...

更新时间：2026-3-1 10:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市柯尔基电子有限公司
IRFZ48RPBF
IR
23+24
TO-220
59630
主营原装MOS,二三级管,肖特基,功率场效应管
询价
深圳市胜彬电子有限公司
IRFZ48RS
IR
22+
D2-PAK
8000
原装正品支持实单
询价
现代芯城（深圳）科技有限公司
IRFZ48RSPBF-VB
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市南科功率半导体有限公司
IRFZ48RSPBF
NK/南科功率
2025+
TO-263-2
986966
国产
询价
深圳市威尔健半导体有限公司
IRFZ48RPBF
IR
23+
TO-220
50000
全新原装正品现货,支持订货
询价
富凯科技(深圳）有限公司
IRFZ48R
NCE/新洁能
24+
TO-220C
50000
只做原装，欢迎询价，量大价优
询价
深圳市科芯源微电子有限公司
IRFZ48RPBF
INFINEON/英飞凌
2026+
TO-220AB
54648
百分百原装现货 实单必成 欢迎询价
询价
贸泽芯城（深圳）电子科技有限公司
IRFZ48RLPbF
VISHAY/威世
23+
TO-262AA
62003
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
芯有半导体（深圳）有限公司
IRFZ48R
IR
05+
原厂原装
15645
只做全新原装真实现货供应
询价
中天科工半导体（深圳）有限公司
IRFZ48R
IR
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
询价

IRFZ48R芯片相关品牌

IRFZ48R规格书下载地址

IRFZ48R参数引脚图相关

IRFZ48R数据表相关新闻

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