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位置：首页 > IC中文资料 > IRFZ46

IRFZ46价格

参考价格：￥4.7224

型号：IRFZ46NLPBF 品牌：International 备注：这里有IRFZ46多少钱，2026年最近7天走势，今日出价，今日竞价，IRFZ46批发/采购报价，IRFZ46行情走势销售排行榜，IRFZ46报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ46

Power MOSFET

FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggediz

VISHAYVishay Siliconix

威世威世科技公司

IRFZ46

Power MOSFET(Vdss=50V, Rds(on)=0.024ohm, Id=50*A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ● Dynamic dv/dt Rating ● 175 °C Operating Temperature ● Fast Switching ● Ease of Paralleling

IRF

IRFZ46

Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46

HEXFET Power MOSFET

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. • Dynamic dv/dt Rating • 175°C Op

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRFZ46

Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)

INFINEON

英飞凌

IRFZ46L

Advanced Process Technology

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFZ46N

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤16.5mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IRFZ46N

Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46N

Advanced Process Technology

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides

SYC

IRFZ46N

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

INFINEON

英飞凌

IRFZ46NL

采用 TO-262 封装的 55V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

INFINEON

英飞凌

IRFZ46NL

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46NLPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRFZ46NPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46NS

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46NSPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRFZ46NSTRL

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46NSTRR

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46PBF

Power MOSFET

FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggediz

VISHAYVishay Siliconix

威世威世科技公司

IRFZ46S

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFZ46Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRFZ46ZL

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRFZ46ZLPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRFZ46ZPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRFZ46ZS

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRFZ46ZSPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRFZ46N

HEXFET짰 Power MOSFET(VDSS = 55V,RDS(on) = 16.5m廓,ID = 53A)

文件：190.15 Kbytes Page：9 Pages

IRF

IRFZ46N

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRFZ46N_04

HEXFET짰 Power MOSFET(VDSS = 55V,RDS(on) = 16.5m廓,ID = 53A)

文件：190.15 Kbytes Page：9 Pages

IRF

IRFZ46NL

Advanced Process Technology

文件：262.94 Kbytes Page：11 Pages

IRF

IRFZ46NPBF

ADVANCED PROCESS TECHNOLOGY

文件：221.33 Kbytes Page：8 Pages

IRF

IRFZ46NPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：221.33 Kbytes Page：8 Pages

IRF

IRFZ46NS

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

文件：244.23 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ46NS

丝印代码：D2PAK；N-Channel 60-V (D-S) MOSFET

文件：1.02402 Mbytes Page：8 Pages

VBSEMI

微碧半导体

IRFZ46NS

Advanced Process Technology

文件：262.94 Kbytes Page：11 Pages

IRF

IRFZ46NSLPBF

Advanced Process Technology

文件：262.94 Kbytes Page：11 Pages

IRF

IRFZ46NSPBF

ADVANCED PROCESS TECHNOLOGY

文件：687.68 Kbytes Page：11 Pages

IRF

IRFZ46NSPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：687.68 Kbytes Page：11 Pages

IRF

IRFZ46NSTRLPBF

ADVANCED PROCESS TECHNOLOGY

文件：687.68 Kbytes Page：11 Pages

IRF

IRFZ46Z

N-Channel MOSFET Transistor

文件：338.8 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ46ZPBF

ADVANCED PROCESS TECHNOLOGY

文件：381.21 Kbytes Page：12 Pages

IRF

IRFZ46ZPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：381.21 Kbytes Page：12 Pages

IRF

IRFZ46ZS

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：300.05 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ46产品属性

  • 类型

    描述

  • OPN：

    IRFZ46NPBF

  • Qualification：

    Non-Automotive

  • Package name：

    TO220

  • VDS max：

    55 V

  • RDS (on) @10V max：

    16.5 mΩ

  • ID @25°C max：

    53 A

  • QG typ @10V：

    48 nC

  • Polarity：

    N

  • VGS(th) min：

    2 V

  • VGS(th) max：

    4 V

  • VGS(th)：

    3 V

  • Technology：

    IR MOSFET™

IRFZ46供应商更多...

更新时间：2026-7-22 19:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
IRFZ46NPBF
INFINEON/英飞凌
25+
TO-220
20300
INFINEON/英飞凌原装特价IRFZ46NPBF即刻询购立享优惠#长期有货
询价
深圳市科恒伟业电子有限公司
IRFZ46NPBF
INFINEON/英飞凌
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
询价
深圳市赛尔通科技有限公司
IRFZ46NPBF
IR
23+
TO-220
65400
询价
深圳市拓亿芯电子有限公司
IRFZ46NPBF
IR
26+
TO-220
12000
只做原装正品
询价
深圳市富利微电子科技有限公司
IRFZ46NPBF
IR
26+
TO-220
20540
保证进口原装现货假一赔十
询价
深圳市卓越微芯电子有限公司
IRFZ46NPBF
IR
25+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市恒达亿科技有限公司
IRFZ46NPBF
IR
25+
TO220
6000
全新原装现货、诚信经营!
询价
深圳市美思瑞电子科技有限公司
IRFZ46NS
IR
22+
D2-PAK
9450
原装正品，实单请联系
询价
深圳市昊创电子有限公司
IRFZ46NPBF
IR
2021+
TO-220AB
9450
原装现货。
询价
柒号芯城电子商务(深圳)有限公司
IRFZ46NPBF
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价

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IRFZ46规格书下载地址

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