IRFZ46Z价格

参考价格:¥4.9044

型号:IRFZ46ZLPBF 品牌:IR 备注:这里有IRFZ46Z多少钱,2026年最近7天走势,今日出价,今日竞价,IRFZ46Z批发/采购报价,IRFZ46Z行情走势销售排行榜,IRFZ46Z报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ46Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRFZ46Z

N-Channel MOSFET Transistor

文件:338.8 Kbytes Page:2 Pages

ISC

无锡固电

IRFZ46Z

采用 TO-220AB 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

AUTOMOTIVE MOSFET

Infineon

英飞凌

ADVANCED PROCESS TECHNOLOGY

文件:381.21 Kbytes Page:12 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:381.21 Kbytes Page:12 Pages

IRF

Isc N-Channel MOSFET Transistor

文件:300.05 Kbytes Page:2 Pages

ISC

无锡固电

55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Infineon

英飞凌

IRFZ46Z产品属性

  • 类型

    描述

  • 型号

    IRFZ46Z

  • 功能描述

    MOSFET N-CH 55V 51A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-1-3 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
3850
原装现货,当天可交货,原型号开票
Infineon(英飞凌)
24+
D2PAK
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
IR
24+
TO-262
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
Infineon/英飞凌
24+
D2PAK
25000
原装正品,假一赔十!
25+
TO-220
500000
行业低价,代理渠道
IR
23+
NA
1186
专做原装正品,假一罚百!
IR
25+23+
TO-262
16569
绝对原装正品全新进口深圳现货
Infineon/英飞凌
21+
D2PAK
6820
只做原装,质量保证
IR
24+
D2-Pak
8866
IR
24+
TO263
27950
郑重承诺只做原装进口现货

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