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IRFZ46Z价格
参考价格：￥4.9044
型号：IRFZ46ZLPBF 品牌：IR 备注：这里有IRFZ46Z多少钱，2025年最近7天走势，今日出价，今日竞价，IRFZ46Z批发/采购报价，IRFZ46Z行情走势销售排行榜，IRFZ46Z报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFZ46Z | AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF |   | |
IRFZ46Z | N-Channel MOSFET Transistor 文件：338.8 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFZ46Z | 采用 TO-220AB 封装的 55V 单 N 通道 HEXFET 功率 MOSFET | Infineon 英飞凌 | | |
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | | ||
AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb | IRF | | ||
AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb | IRF | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | | ||
AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb | IRF | | ||
AUTOMOTIVE MOSFET | Infineon 英飞凌 | | ||
ADVANCED PROCESS TECHNOLOGY 文件：381.21 Kbytes Page：12 Pages | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：381.21 Kbytes Page：12 Pages | IRF | | ||
Isc N-Channel MOSFET Transistor 文件：300.05 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装 | Infineon 英飞凌 | |
IRFZ46Z产品属性
- 类型
描述
- 型号
IRFZ46Z
- 功能描述
MOSFET N-CH 55V 51A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
501435 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
25+23+ |
TO-220 |
25450 |
绝对原装正品全新进口深圳现货 |
|||
IR |
24+ |
D2-pak |
44 |
只做原厂渠道 可追溯货源 |
|||
IR |
24+ |
TO-220AB |
8866 |
||||
IR |
NEW |
TO-220 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
Infineon(英飞凌) |
24+ |
D2PAK |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
NA/ |
179 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
24+ |
TO-262 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
IRFZ46Z规格书下载地址
IRFZ46Z参数引脚图相关
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IRFZ46Z数据表相关新闻
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2021-8-10IRG4PC50WPBF
属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-17IRFZ44NPBF选拓亿芯电子，国际电子元器件供应商
元器件优质供应
2019-11-1
DdatasheetPDF页码索引
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