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IRFZ46NL中文资料
IRFZ46NL数据手册规格书PDF详情
Description
Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
• Advanced Process Technology
• Surface Mount(IRFZ46NS)
• Low-profile through-hole(IRFZ46NL)
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
IRFZ46NL产品属性
- 类型
描述
- 型号
IRFZ46NL
- 功能描述
MOSFET N-CH 55V 53A TO-262
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-262 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
TO-262 |
8866 |
||||
IR |
23+ |
TO-262 |
5000 |
原装正品,假一罚十 |
|||
IR |
2015+ |
TO-262 |
12500 |
全新原装,现货库存长期供应 |
|||
IR |
17+ |
TO-262 |
9888 |
只做原装,现货库存 |
|||
IR |
23+ |
TO-262-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON |
25+ |
TO-262 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
21+ |
TO-262 |
10000 |
原装现货假一罚十 |
|||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
Infineon/英飞凌 |
20+ |
TO-262 |
1200 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
IRFZ46NLPBF 价格
参考价格：￥4.7224
IRFZ46NL 资料下载更多...
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