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位置：首页 > IC中文资料第2749页 > IRFZ46N

IRFZ46N价格

参考价格：￥4.7224

型号：IRFZ46NLPBF 品牌：International 备注：这里有IRFZ46N多少钱，2025年最近7天走势，今日出价，今日竞价，IRFZ46N批发/采购报价，IRFZ46N行情走势销售排行榜，IRFZ46N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ46N

Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46N

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤16.5mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IRFZ46N

Advanced Process Technology

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides

SYC

IRFZ46N

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

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IRFZ46N

HEXFET짰 Power MOSFET(VDSS = 55V,RDS(on) = 16.5m廓,ID = 53A)

文件：190.15 Kbytes Page：9 Pages

IRF

IRFZ46N

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Infineon

英飞凌

IRFZ46NL

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46NLPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRFZ46NPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46NS

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46NSPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRFZ46NSTRL

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46NSTRR

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46N_04

HEXFET짰 Power MOSFET(VDSS = 55V,RDS(on) = 16.5m廓,ID = 53A)

文件：190.15 Kbytes Page：9 Pages

IRF

IRFZ46NL

Advanced Process Technology

文件：262.94 Kbytes Page：11 Pages

IRF

IRFZ46NL

采用 TO-262 封装的 55V 单 N 沟道功率 MOSFET

Infineon

英飞凌

IRFZ46NPBF

ADVANCED PROCESS TECHNOLOGY

文件：221.33 Kbytes Page：8 Pages

IRF

IRFZ46NPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：221.33 Kbytes Page：8 Pages

IRF

IRFZ46NS

Advanced Process Technology

文件：262.94 Kbytes Page：11 Pages

IRF

IRFZ46NS

isc N-Channel MOSFET Transistor

文件：244.23 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ46NS

N-Channel 60-V (D-S) MOSFET

文件：1.02402 Mbytes Page：8 Pages

VBSEMI

微碧半导体

IRFZ46NS

采用 D2-Pak 封装的 55V 单 N 通道功率 MOSFET

Infineon

英飞凌

IRFZ46NSLPBF

Advanced Process Technology

文件：262.94 Kbytes Page：11 Pages

IRF

IRFZ46NSPBF

ADVANCED PROCESS TECHNOLOGY

文件：687.68 Kbytes Page：11 Pages

IRF

IRFZ46NSPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：687.68 Kbytes Page：11 Pages

IRF

IRFZ46NSTRLPBF

ADVANCED PROCESS TECHNOLOGY

文件：687.68 Kbytes Page：11 Pages

IRF

IRFZ46N产品属性

  • 类型

    描述

  • 型号

    IRFZ46N

  • 功能描述

    MOSFET MOSFET, 55V, 46A, 16.5 mOhm, 48 nC Qg, TO-220AB

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRFZ46N供应商更多...

更新时间：2025-10-4 11:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市宇创芯科技有限公司
IRFZ46N
IR
24+
TO-220
9600
原装现货,优势供应,支持实单!
询价
深圳市勤思达科技有限公司
IRFZ46NPBF
IR
13+
TO-220
100000
深圳市勤思达科技有限公司主营IR系列全新原装正品,公司现货供应IRFZ460NPBF,绝对正品,欢迎咨询洽谈。
询价
深圳市坤融电子科技有限公司
IRFZ46NSPBF
IR
24+
D2-pak
20000
只做原厂渠道 可追溯货源
询价
深圳市莱克讯科技有限公司
IRFZ46N
IR
1923+
TO220
3689
原装进口现货库存专业工厂研究所配单供货
询价
深圳市威尔健半导体有限公司
IRFZ46N
IR
23+
TO-220
50000
全新原装正品现货,支持订货
询价
深圳市一线半导体有限公司
IRFZ46N
IR
24+
TO-220
5
询价
深圳市星佑电子有限公司
IRFZ46N
IR
05+
TO-220
22000
自己公司全新库存绝对有货
询价
深圳市高捷芯城科技有限公司
IRFZ46NLPBF
Infineon(英飞凌)
24+
TO-262
8498
支持大陆交货,美金交易。原装现货库存。
询价
深圳市毅创腾电子科技有限公司
IRFZ46N
IR
TO-220
900
原装长期供货!
询价
深圳市柯尔基电子有限公司
IRFZ46NPBF
IR
23+/24+
TO-220AB
9865
原包原标签100%进口原装可开13%税
询价

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