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IRFZ46N价格
参考价格:¥4.7224
型号:IRFZ46NLPBF 品牌:International 备注:这里有IRFZ46N多少钱,2024年最近7天走势,今日出价,今日竞价,IRFZ46N批发/采购报价,IRFZ46N行情走势销售排行榜,IRFZ46N报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRFZ46N | Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFZ46N | N-Channel MOSFET Transistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤16.5mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRFZ46N | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
IRFZ46N | HEXFET짰 Power MOSFET(VDSS = 55V,RDS(on) = 16.5m廓,ID = 53A) 文件:190.15 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
HEXFET POWER MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰 Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET POWER MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET POWER MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET POWER MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰 Power MOSFET(VDSS = 55V,RDS(on) = 16.5m廓,ID = 53A) 文件:190.15 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Advanced Process Technology 文件:262.94 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:221.33 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:221.33 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Advanced Process Technology 文件:262.94 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
isc N-Channel MOSFET Transistor 文件:244.23 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel 60-V (D-S) MOSFET 文件:1.02402 Mbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Advanced Process Technology 文件:262.94 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:687.68 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:687.68 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 |
IRFZ46N产品属性
- 类型
描述
- 型号
IRFZ46N
- 功能描述
MOSFET MOSFET, 55V, 46A, 16.5 mOhm, 48 nC Qg, TO-220AB
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
TO-262 |
800000 |
原装正品 |
|||
IR |
17+ |
FAX:6564815466 |
9800 |
只做全新进口原装,现货库存 |
|||
21+ |
WSOP16 |
2521 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
INFINEON/英飞凌 |
21+ |
TO-220 |
15473 |
||||
IR |
23+ |
TO-220 |
9960 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
INFINEON/英飞凌 |
22+ |
TO-220 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
IR |
2020+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
23+ |
TO-220 |
20540 |
保证进口原装现货假一赔十 |
|||
IR |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
Infineon Technologies |
23+ |
TO-262 |
30000 |
晶体管-分立半导体产品-原装正品 |
IRFZ46N规格书下载地址
IRFZ46N参数引脚图相关
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IRFZ46N数据表相关新闻
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属性参数值 商品目录IGBT管 集电极电流(Ic)(最大值)55A 集射极击穿电压(最大值)600V 类型- 不同Vge,Ic时的Vce(on)2.3V@15V,27A 栅极阈值电压-VGE(th)6V@250uA
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原装正品现货热卖中,焕盛达-专注原装用芯服务;
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元器件优质供应
2019-11-1
DdatasheetPDF页码索引
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