IRFZ46NS价格

参考价格:¥3.6203

型号:IRFZ46NSTRLPBF 品牌:International 备注:这里有IRFZ46NS多少钱,2025年最近7天走势,今日出价,今日竞价,IRFZ46NS批发/采购报价,IRFZ46NS行情走势销售排行榜,IRFZ46NS报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ46NS

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46NS

Advanced Process Technology

文件:262.94 Kbytes Page:11 Pages

IRF

IRFZ46NS

isc N-Channel MOSFET Transistor

文件:244.23 Kbytes Page:2 Pages

ISC

无锡固电

IRFZ46NS

N-Channel 60-V (D-S) MOSFET

文件:1.02402 Mbytes Page:8 Pages

VBSEMI

微碧半导体

IRFZ46NS

采用 D2-Pak 封装的 55V 单 N 通道功率 MOSFET

Infineon

英飞凌

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

Advanced Process Technology

文件:262.94 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:687.68 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:687.68 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:687.68 Kbytes Page:11 Pages

IRF

IRFZ46NS产品属性

  • 类型

    描述

  • 型号

    IRFZ46NS

  • 功能描述

    MOSFET N-CH 55V 53A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-10-4 16:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
D2PAK
8357
支持大陆交货,美金交易。原装现货库存。
IR
23+
TO-263
10065
原装正品,有挂有货,假一赔十
IR
24+
TO-263
501434
免费送样原盒原包现货一手渠道联系
IR
22+
TO-263
8000
原装正品支持实单
Infineon Technologies
23+
TO2633 D2Pak (2 Leads + Tab) T
9000
原装正品,支持实单
IR
2023+
D2-PAK
50000
原装现货
Infineon Technologies
23+
原装
8000
只做原装现货
Infineon Technologies
23+
原装
7000
IR(国际整流器)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
VBsemi(台湾微碧)
2447
TO263
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期

IRFZ46NS数据表相关新闻