IRFZ46NS价格

参考价格:¥3.6203

型号:IRFZ46NSTRLPBF 品牌:International 备注:这里有IRFZ46NS多少钱,2025年最近7天走势,今日出价,今日竞价,IRFZ46NS批发/采购报价,IRFZ46NS行情走势销售排行榜,IRFZ46NS报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ46NS

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46NS

Advanced Process Technology

文件:262.94 Kbytes Page:11 Pages

IRF

IRFZ46NS

isc N-Channel MOSFET Transistor

文件:244.23 Kbytes Page:2 Pages

ISC

无锡固电

IRFZ46NS

N-Channel 60-V (D-S) MOSFET

文件:1.02402 Mbytes Page:8 Pages

VBSEMI

微碧半导体

IRFZ46NS

采用 D2-Pak 封装的 55V 单 N 通道功率 MOSFET

Infineon

英飞凌

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

Advanced Process Technology

文件:262.94 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:687.68 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:687.68 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:687.68 Kbytes Page:11 Pages

IRF

IRFZ46NS产品属性

  • 类型

    描述

  • 型号

    IRFZ46NS

  • 功能描述

    MOSFET N-CH 55V 53A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-11-25 17:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
TO-263
68500
一级代理 原装正品假一罚十价格优势长期供货
INFINE0N
21+
D2PAK (TO-263)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
IR
NEW
TO-263
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
22+
TO-263
8000
原装正品支持实单
IR
24+
D2-Pak
8866
IR/VISHAY
24+
NA/
32500
优势代理渠道,原装正品,可全系列订货开增值税票
Infineon Technologies
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
IR
22+
D2-PAK
9450
原装正品,实单请联系
Infineon(英飞凌)
24+
D2PAK
8357
支持大陆交货,美金交易。原装现货库存。
IR
05+
TO-263
30000
全新原装 绝对有货

IRFZ46NS数据表相关新闻