IRFZ46NS价格

参考价格:¥3.6203

型号:IRFZ46NSTRLPBF 品牌:International 备注:这里有IRFZ46NS多少钱,2026年最近7天走势,今日出价,今日竞价,IRFZ46NS批发/采购报价,IRFZ46NS行情走势销售排行榜,IRFZ46NS报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ46NS

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ46NS

Advanced Process Technology

文件:262.94 Kbytes Page:11 Pages

IRF

IRFZ46NS

isc N-Channel MOSFET Transistor

文件:244.23 Kbytes Page:2 Pages

ISC

无锡固电

IRFZ46NS

N-Channel 60-V (D-S) MOSFET

文件:1.02402 Mbytes Page:8 Pages

VBSEMI

微碧半导体

IRFZ46NS

采用 D2-Pak 封装的 55V 单 N 通道功率 MOSFET

INFINEON

英飞凌

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

HEXFET POWER MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

Advanced Process Technology

文件:262.94 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:687.68 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:687.68 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:687.68 Kbytes Page:11 Pages

IRF

IRFZ46NS产品属性

  • 类型

    描述

  • 型号

    IRFZ46NS

  • 功能描述

    MOSFET N-CH 55V 53A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-1-27 14:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
21+
TO-263
800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon
原厂封装
9800
原装进口公司现货假一赔百
IR
25+
TO-263
4500
全新原装、诚信经营、公司现货销售
INFINEON
25+
TO-263
3675
就找我吧!--邀您体验愉快问购元件!
IR
26+
TO-263
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
INFINE0N
21+
D2PAK (TO-263)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
INFINEON/IR
25+
NA
30000
房间原装现货特价热卖,有单详谈
IR
2023+
D2-PAK
50000
原装现货
IR
24+
D2-Pak
27500
原装正品,价格最低!
INFINEON/IR
23+
NA
800
电子元器件供应原装现货. 优质独立分销。原厂核心渠道

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