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IR210价格

参考价格：￥3.4662

型号：IR2101PBF 品牌：International 备注：这里有IR210多少钱，2025年最近7天走势，今日出价，今日竞价，IR210批发/采购报价，IR210行情走势销售排行榜，IR210报价。

型号	功能描述	生产厂家企业	LOGO
IR2101	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	Infineon 英飞凌	Infineon
IR2101	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	IRF	IRF
IR2101	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	IRF	IRF
IR2101	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	IRF	IRF
IR21014	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	IRF	IRF
IR2101S	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	Infineon 英飞凌	Infineon
IR2101S	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	IRF	IRF
IR2101SPBF	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	IRF	IRF
IR2102	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	IRF	IRF
IR2102	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	Infineon 英飞凌	Infineon
IR2102	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	IRF	IRF
IR21024	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	IRF	IRF
IR2102S	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	Infineon 英飞凌	Infineon
IR2102S	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	IRF	IRF
IR2102S	HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard	IRF	IRF
IR2103	HALF-BRIDGE DRIVER Description The IR2103(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LS	IRF	IRF
IR2103S	HALF-BRIDGE DRIVER Description The IR2103(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LS	IRF	IRF
IR2104	HALF-BRIDGE DRIVER Description The IR2104(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT	IRF	IRF
IR2104PBF	HALF-BRIDGE DRIVER Description The IR2104(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT	IRF	IRF
IR2104S	HALF-BRIDGE DRIVER Description The IR2104(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT	IRF	IRF
IR2104SPBF	HALF-BRIDGE DRIVER Description The IR2104(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT	IRF	IRF
IR2104STRPBF	HALF-BRIDGE DRIVER Description The IR2104(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT	IRF	IRF
IR2105	High Voltage, High Speed Power MOSFET and IGBT Driver Description The IR2105 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL o	IRF	IRF
IR2105S	High Voltage, High Speed Power MOSFET and IGBT Driver Description The IR2105 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL o	IRF	IRF
IR2106	HIGH AND LOW SIDE DRIVER Description The IR2106/IR21064/IR2107/IR21074 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with	IRF	IRF
IR2106	HIGH AND LOW SIDE DRIVER Description The IR2106/IR21064/IR2107/IR21074 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with	IRF	IRF
IR21064	HIGH AND LOW SIDE DRIVER Description The IR2106/IR21064/IR2107/IR21074 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with	IRF	IRF
IR21064	HIGH AND LOW SIDE DRIVER Description The IR2106/IR21064/IR2107/IR21074 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with	IRF	IRF
IR21064S	HIGH AND LOW SIDE DRIVER Description The IR2106/IR21064/IR2107/IR21074 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with	IRF	IRF
IR2106PBF	HIGH AND LOW SIDE DRIVER Description The IR2106(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output chan nels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS o	IRF	IRF
IR2106S	HIGH AND LOW SIDE DRIVER Description The IR2106/IR21064/IR2107/IR21074 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with	IRF	IRF
IR2106SPBF	HIGH AND LOW SIDE DRIVER Description The IR2106(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output chan nels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS o	IRF	IRF
IR2106STRPBF	HIGH AND LOW SIDE DRIVER Description The IR2106(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or	IRF	IRF
IR2107	HIGH AND LOW SIDE DRIVER Description The IR2106/IR21064/IR2107/IR21074 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with	IRF	IRF
IR21074	HIGH AND LOW SIDE DRIVER Description The IR2106/IR21064/IR2107/IR21074 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with	IRF	IRF
IR2108	HALF-BRIDGE DRIVER Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or	IRF	IRF
IR2108	Gate drive supply range from 10 to 20V Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or	IRF	IRF
IR21084	HALF-BRIDGE DRIVER Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or	IRF	IRF
IR21084S	HALF-BRIDGE DRIVER Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or	IRF	IRF
IR21084SPBF	Gate drive supply range from 10 to 20V Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or	IRF	IRF
IR2108S	HALF-BRIDGE DRIVER Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or	IRF	IRF
IR2109	HALF-BRIDGE DRIVER Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or	IRF	IRF
IR21091	HALF-BRIDGE DRIVER Description The IR21091(S) are high voltage, high speed power MOSFET and IGBT drivers with dependant high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LST	IRF	IRF
IR21091PBF	HALF-BRIDGE DRIVER Description The IR21091(S) are high voltage, high speed power MOSFET and IGBT drivers with dependant high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LST	IRF	IRF
IR21091S	HALF-BRIDGE DRIVER Description The IR21091(S) are high voltage, high speed power MOSFET and IGBT drivers with dependant high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LST	IRF	IRF
IR21091SPBF	HALF-BRIDGE DRIVER Description The IR21091(S) are high voltage, high speed power MOSFET and IGBT drivers with dependant high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LST	IRF	IRF
IR21094	HALF-BRIDGE DRIVER Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or	IRF	IRF
IR21094S	HALF-BRIDGE DRIVER Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or	IRF	IRF
IR2109S	HALF-BRIDGE DRIVER Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or	IRF	IRF
IR2101STRPBF	IR2101S是一款半桥前级驱动IC，能够驱动一对功率器件（IGBT/N-MOSFET）。适用于具有外部自举二极管的典型自举架构。具备UVLO（欠压锁定）和交叉导通防护功能。文件：2.666102 Mbytes Page：8 Pages	XBLW 芯伯乐 PDF上传者：深圳市博伟奇电子有限公司	XBLW
IR2101	HIGH AND LOW SIDE DRIVER 文件：144.27 Kbytes Page：14 Pages	IRF	IRF
IR2101	HIGH AND LOW SIDE DRIVER 文件：144.27 Kbytes Page：14 Pages	IRF	IRF
IR2101	HIGH AND LOW SIDE DRIVER Product Summary 文件：144.27 Kbytes Page：14 Pages	IRF	IRF
IR2101_04	HIGH AND LOW SIDE DRIVER 文件：144.27 Kbytes Page：14 Pages	IRF	IRF
IR2101_15	HIGH AND LOW SIDE DRIVER 文件：144.27 Kbytes Page：14 Pages	IRF	IRF
IR21014	封装/外壳：14-DIP（0.300"，7.62mm）包装：管件描述：IC GATE DRVR HALF-BRIDGE 14DIP 集成电路（IC）栅极驱动器	Infineon 英飞凌	Infineon
IR21014S	封装/外壳：14-SOIC（0.154"，3.90mm 宽）包装：管件描述：IC GATE DRVR HALF-BRIDGE 14SOIC 集成电路（IC）栅极驱动器	Infineon 英飞凌	Infineon
IR2101PBF	HIGH AND LOW SIDE DRIVER 文件：144.27 Kbytes Page：14 Pages	IRF	IRF
IR2101STRPBF	HIGH AND LOW SIDE DRIVER Product Summary 文件：144.27 Kbytes Page：14 Pages	IRF	IRF
IR2102	HIGH AND LOW SIDE DRIVER 文件：144.27 Kbytes Page：14 Pages	IRF	IRF

IR210产品属性

类型
描述
型号
IR210
功能描述
DC-to-DC Voltage Converter

IR210供应商更多...

更新时间：2025-12-25 15:06:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市华来深电子有限公司	IR2101S	IR	23+	SOP-8	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市拓亿芯电子有限公司	IR2101S	IOR	25+	SOP8	9800	全新原装现货,假一赔十	询价
艾睿（深圳）半导体有限公司	IR2101S	IR	2447	SOP8	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市英卓尔科技有限公司	IR2101S	IRF	20+	SOP-8	2960	诚信交易大量库存现货	询价
深圳市卓越微芯电子有限公司	IR2101S	IOR	25+	SOP8	115	百分百原装正品真实公司现货库存本公司只做原装可	询价
谛辉(北京/上海/青岛 )电子科技有限公司	IR2101S		25+	SOP8	18000	原厂直接发货进口原装	询价
深圳市佳鑫美电子科技有限公司	IR2101S	IOR	25+	SOP8	2650	原装优势!绝对公司现货	询价
深圳市宇集芯电子有限公司	IR2101S	IR	24+	SOP8	90000	一级代理商进口原装现货、价格合理	询价
深圳市星佑电子有限公司	IR2101S	IR	06+	?SOP-8	2000	全新原装绝对有货	询价
深圳市一线半导体有限公司	IR2101S	IOR	24+	SOP8	3480		询价

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IR210规格书下载地址

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IR210数据表相关新闻

IR2011STRPBF 栅极驱动器
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IR1KIT红外线温度计
温度计有一个瞄准激光器，温度范围从 -4°F 到 +752°F
2021-11-6
IR2101STRPBF
SOT-23-5 MOSFET Gate Drivers SMD/SMT 门驱动器 , SOT-23-5 MOSFET Gate Drivers SMD/SMT 门驱动器 , MP6528 门驱动器 , 1 Output 1 Driver 门驱动器 , SMD/SMT 门驱动器 , TSSOP-20 门驱动器
2021-9-10
IR2085S-高速，100V的，自振荡50％的占空比，半桥式驱动器
说明该IR2085S是自激式半桥和50％占空比驱动IC理想适合于36V-75V的半桥式DC总线转换器。本产品还适用于推挽没有根据输入电压的限制转换器。每个通道的频率为fOSC，其中fosc的逆转录可以通过选择和CT组，其中fosc的≈1 /（2 * RT.CT）。死区时间可控制，通过选择合适的CT范围可以从50到200nsec。内部软启动过程中增加了脉冲宽度电脉冲宽度，并保持在整个上升周期开始的高，低产出的匹配。该IR2085S在启动后，每过电流和电源软启动条件。欠压锁定阻止如果VCC小于7.5Vdc操作。特点 •简单的初
2013-2-10
IR2103-半桥驱动器
说明在IR2103（S）的高电压，高速动力供养高，MOSFET和IGBT驱动器低侧参考输出通道。专有的HVIC免疫和闩锁的CMOS技术使坚固耐用单片建设。逻辑输入兼容标准CMOS或LSTTL输出，下降到3.3V逻辑。输出驱动器具有高脉冲电流缓冲级，设计为最小驱动器跨导。浮动通道可以用来驱动一个N沟道功率MOSFET在高端配置的可在高达600伏或IGBT。特点 •浮动通道设计为引导操作+600 V全面运作耐瞬态电压负dV / dt的免疫 •门极驱动电压范围从10至20V •欠压锁定
2013-2-9

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IR210价格

IR210产品属性

IR210供应商更多...

IR210芯片相关品牌

IR210规格书下载地址

IR210参数引脚图相关

IR210数据表相关新闻

IR2011STRPBF 栅极驱动器

IR2103STRPBF

IR1KIT红外线温度计

IR2101STRPBF

IR2085S-高速，100V的，自振荡50％的占空比，半桥式驱动器

IR2103-半桥驱动器

DdatasheetPDF页码索引