IR2102价格
参考价格：￥5.9219
型号：IR2102PBF 品牌：Internation.Rectifer 备注：这里有IR2102多少钱，2026年最近7天走势，今日出价，今日竞价，IR2102批发/采购报价，IR2102行情走势销售排行榜，IR2102报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IR2102 | HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard | IRF |   | |
IR2102 | HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard | IRF | | |
IR2102 | HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard | INFINEON 英飞凌 | | |
IR2102 | 600 V 高边和低边栅极驱动器 IC 600 V 高边和低边驱动器 IC,具有典型的 0.21 A 拉电流和 0.36 A 灌电流，采用 8 引脚 PDIP 封装，适用于 IGBT 和 MOSFET。也有 8 引脚 SOIC 封装可选。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 +600 V\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动电源范围：10 至 20V\n• 欠压锁定\n• 3.3V、5V 和 15V 逻辑输入兼容\n• 双通道的匹配传播延迟\n• 输出与输入不同相或与输入 (IR2101 ) 同相\n\n优势:; | INFINEON 英飞凌 | | |
IR2102 | HIGH AND LOW SIDE DRIVER 文件：144.27 Kbytes Page：14 Pages | IRF | | |
IR2102 | HIGH AND LOW SIDE DRIVER Product Summary 文件：144.27 Kbytes Page：14 Pages | IRF | | |
IR2102 | 封装/外壳：8-DIP（0.300"，7.62mm） 包装：散装 描述：IC GATE DRVR HALF-BRIDGE 8DIP 集成电路（IC） 栅极驱动器 | INFINEON 英飞凌 | | |
HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard | INFINEON 英飞凌 | | ||
600 V high-side and low-side gate driver IC 600 V High and Low Side Driver IC with typical 0.21 A source and 0.36 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. • Floating channel designed for bootstrap operation\n• Fully operational to +600 V\n• Tolerant to negative transient voltage\n• dV/dt immune\n• Gate drive supply range from 10 to 20 V\n• Undervoltage lockout\n• 3.3 V, 5 V, and 15 V logic input compatible\n• Matched propagation delay for both channel; | INFINEON 英飞凌 | | ||
HIGH AND LOW SIDE DRIVER 文件：144.27 Kbytes Page：14 Pages | IRF | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：散装 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器 | INFINEON 英飞凌 | | ||
HIGH AND LOW SIDE DRIVER 文件：144.27 Kbytes Page：14 Pages | IRF | | ||
Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate N–Cha | NTE | | ||
SYSTEM RESET IC 文件：314.14 Kbytes Page：11 Pages | NJRC 日本无线 | | ||
SYSTEM RESET IC 文件：314.14 Kbytes Page：11 Pages | NJRC 日本无线 | | ||
SYSTEM RESET IC 文件：314.14 Kbytes Page：11 Pages | NJRC 日本无线 | | ||
SYSTEM RESET IC 文件：314.14 Kbytes Page：11 Pages | NJRC 日本无线 | |
IR2102产品属性
- 类型
描述
- Product Status：
active and preferred
- Voltage Class：
600 V
- Output Current Source min：
0.13 A
- Output Current Source：
0.21 A
- Output Current Sink min：
0.27 A
- Output Current Sink：
0.36 A
- Channels：
2
- Configuration：
High-side and low-side
- Qualification：
Industrial
- Isolation Type：
Functional levelshift
- Switch Type：
IGBT/MOSFET
- Package name：
PDIP8
- UVLO Input Off：
8.2 V
- Turn On Propagation Delay max：
220 ns
- Turn On Propagation Delay：
160 ns
- Turn Off Propagation Delay max：
220 ns
- Turn Off Propagation Delay：
150 ns
- Input Vcc min：
10 V
- Input Vcc max：
20 V
- Output Vbs min：
10 V
- Output Vbs max：
20 V
- Rise Time max：
170 ns
- Rise Time：
100 ns
- Fall Time max：
90 ns
- Fall Time：
50 ns
- UVLO Input On：
8.9 V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
25+ |
SOP-8 |
6000 |
全新原装现货、诚信经营! |
|||
Infineon/英飞凌 |
25+ |
SOP-8 |
32000 |
Infineon/英飞凌全新特价IR2102STRPBF即刻询购立享优惠#长期有货 |
|||
IR |
23+ |
SOIC-8 |
65400 |
||||
IR |
25+ |
SOP-8 |
20540 |
保证进口原装现货假一赔十 |
|||
25+ |
560 |
公司现货库存 |
|||||
IR |
25+ |
SOP-8 |
22000 |
原装现货假一罚十 |
|||
IR |
25+ |
SOP-8 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
2450+ |
SOP-8 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
22+ |
原厂封装 |
9025 |
原装正品，实单请联系 |
|||
INFINEON |
23+ |
SOP-8 |
2500 |
正规渠道,只有原装! |
IR2102规格书下载地址
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DdatasheetPDF页码索引
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