HIGH AND LOW SIDE DRIVER

Description The IR2106/IR21064/IR2107/IR21074 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with

600 V high-side and low-side gate driver IC

600 V 高边和低边驱动器 IC,具有典型的 0.2 A 拉电流和 0.35 A 灌电流，采用 8 引脚 SOIC 封装，适用于 IGBT 和 MOSFET。也有 8 引脚 PDIP、14 引脚 SOIC 和 14 引脚 PDIP 封装可选。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 600V\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动供电电压范围：10 至 20V\n• 欠压锁定\n• 3.3V、5V 和 15V 逻辑输入兼容\n• 双通道的匹配传播延迟\n• 逻辑和电源接地 + /- 5 V 偏移\n• 较低的 di/dt 栅极驱动器可获得更好的抗噪声性\n• 输出与输入同相\n\n优势:;

HIGH AND LOW SIDE DRIVER

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封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：散装 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器

HIGH AND LOW SIDE DRIVER

Description The IR2106(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output chan nels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS o

HIGH AND LOW SIDE DRIVER

Description The IR2106(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器

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L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

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Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda