P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management. Features ■ –6.7 A, –12 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 41 mΩ @ VGS = –2.5 V RDS(ON) = 90 mΩ @ VGS = –1.8 V ■ Fast

P-channel Enhancement Mode Power MOSFET

Features  VDS= -30V, ID= -20A RDS(ON)

P-Channel 1.8V Specified PowerTrench

Features ■ –6.7 A, –12 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 41 mΩ @ VGS = –2.5 V RDS(ON) = 90 mΩ @ VGS = –1.8 V ■ Fast switching speed ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability Applications ■ DC/DC converter Genera

ULTRAFAST RECOVERY RECTIFIER

DESCRIPTION  Plastic package has underwriters laboratory flammability classification 94V-0  Lead free in comply with EU RoHS 2011/65/EU directives  Low reverse leakage current  Ultrafast recovery time and soft recovery characteristics  Low recovery loss

Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mOHM P-Channel: -80V, -9.4A, 190mOHM

General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features Q1: N-Channel

Dual N & P-Channel PowerTrench® MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ

Features Q1: N-Channel Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A 100% UIL Tested RoHS Compliant General Description These dual

80V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 10 A, 80 V. RDS(ON) = 20 mΩ @ VGS = 10 V RDS(ON) = 23 mΩ @ VGS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=43A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance -RDS(on) =20mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 40 A RDS(ON)

80V N-Channel PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON

80V N-Channel PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.7A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance -RDS(on) =29mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel Enhancement Mode Power MOSFET

Features  VDS= 80 V, ID= 95A RDS(ON)

100V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 34 A, 100 V. RDS(ON) = 32 mΩ @ VGS = 10 V RDS(ON) = 35 mΩ @

N-channel Enhancement Mode Power MOSFET

Features VDS= 100V, ID= 30 A RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=44A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =28mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 40 A RDS(ON)

N-Channel UltraFET Trench MOSFET 100V, 44A, 28m?

Features • rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/D

N-Channel MOSFET

Application | « Reverse Battery protection | Load switch « Power management « PWM Application |

100V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 25 A, 100 V. RDS(ON) = 46 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 6 V • Low gate charge

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=25A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =46mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel PowerTrench MOSFET 100V, 32A, 36m?

Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectur

isc N-Channel MOSFET Transistor

• DESCRITION • DC-DC Converters and off-line UPS • High Voltage Synchronous Rectifier • FEATURES • Static drain-source on-resistance: RDS(on)≤36mΩ • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 40 A RDS(ON)

N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ

Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Compliant Applications • DC/DC converters and Off-Line UPS • Distribut

100V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V • Low gate charge

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=22A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =64mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 30 A RDS(ON)

20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14.7A@ TC=25℃ ·Drain Source Voltage -VDSS=20V(Min) ·Static Drain-Source On-Resistance -RDS(on) =9mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

P-channel Enhancement Mode Power MOSFET

Features  VDS= -20V, ID= -100A RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=29A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =36mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 42mΩ(Max) ·100 avalanche tested DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive

N-channel Enhancement Mode Power MOSFET

Features  VDS= 150V, ID= 40 A RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=26A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =42mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel Enhancement Mode Power MOSFET

Features  VDS= 150V, ID= 20 A RDS(ON)

400V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.4Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

400V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

400V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

封装/外壳：4-SMD，无引线 功能：启用/禁用 包装：卷带（TR） 描述：XTAL OSC XO 133.0000MHZ CMOS SMD 晶体，振荡器，谐振器 振荡器

DIODE:Fast Recovery (FRD, UFRD)

封装/外壳：4-SMD，无引线 功能：启用/禁用 包装：卷带（TR） 描述：XTAL OSC XO 133.3300MHZ CMOS SMD 晶体，振荡器，谐振器 振荡器

双 N 和 P 沟道 PowerTrench® MOSFET，80V

80V N-Channel PowerTrench MOSFET

80V N-Channel PowerTrench MOSFET

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80V N-Channel PowerTrench MOSFET

文件：76.8 Kbytes Page：5 Pages

100V N-Channel PowerTrench MOSFET

文件：68.7 Kbytes Page：5 Pages

isc N-Channel MOSFET Transistor

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100V N-Channel PowerTrench MOSFET

文件：68.7 Kbytes Page：5 Pages

N-Channel 100-V (D-S) MOSFET

文件：984.84 Kbytes Page：8 Pages

P-Channel PowerTrench짰 MOSFET -40V, -14A, 64m廓

文件：431.6 Kbytes Page：7 Pages

N-Channel UltraFET Trench MOSFET 100V, 44A, 28m廓

文件：117.19 Kbytes Page：6 Pages

N-Channel 100-V (D-S) MOSFET

文件：984.77 Kbytes Page：8 Pages

N-Channel PowerTrench짰 MOSFET 100V, 32A, 36m廓

文件：426.02 Kbytes Page：11 Pages

N-Channel PowerTrench짰 MOSFET

文件：426.02 Kbytes Page：11 Pages

N-Channel 100-V (D-S) MOSFET

文件：984.77 Kbytes Page：8 Pages

N-Channel PowerTrench MOSFET

文件：335.87 Kbytes Page：6 Pages