型号 功能描述 生产厂家 企业 LOGO 操作
FDD3580

80V N-Channel PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON

FAIRCHILD

仙童半导体

FDD3580

80V N-Channel PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON

FAIRCHILD

仙童半导体

FDD3580

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.7A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance -RDS(on) =29mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

FDD3580

N-channel Enhancement Mode Power MOSFET

Features  VDS= 80 V, ID= 95A RDS(ON)

BYCHIP

百域芯

FDD3580

MOSFET N-CH 80V 7.7A D-PAK

ONSEMI

安森美半导体

Pimoroni Unicorn HAT HD

Features o 256 RGB LED pixels in a 16x16 matrix o Pixels driven by ARM STM32F and three STP16CPC26 LED drivers o Bundled ninja diffuser, plus nuts and bolts o Unicorn HAT HD pinout o Compatible with Raspberry Pi 3, 2, B+, A+, Zero, and Zero W o Python library o Comes fully assembled

ADAFRUIT

Ceramic Stand-off Insulators for RF-Equipment

Ceramic Stand-off Insulators for RF-Equipment MATERIAL:    Stand - off insulator elements made from Class 1 Ceramic    material (C 221-IEC 60672-3), body completely glazed.    Connection terminals: brass OPERATING CONDITIONS:    Maximum operating temperature + 100 °C    Maximum compressive

VISHAYVishay Siliconix

威世威世科技公司

Triaxial (F) Bulkhead Receptacle

文件:24.74 Kbytes Page:1 Pages

POMONA

Pomona Electronics

High Voltage OPERATIONAL AMPLIFIERS

文件:2.32549 Mbytes Page:6 Pages

TI

德州仪器

Nytye®Mounting Platforms

文件:231.87 Kbytes Page:1 Pages

HEYCO

FDD3580产品属性

  • 类型

    描述

  • 型号

    FDD3580

  • 功能描述

    MOSFET 80V N-Ch PowerTrench

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-28 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
TO-252(DPAK)
11543
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi(安森美)
25+
TO-252(DPAK)
11543
正规渠道,免费送样。支持账期,BOM一站式配齐
FAIRCHILD
21+
TO252
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FAIRCHILD/仙童
22+
SOT-252
100000
代理渠道/只做原装/可含税
FAIRCHILD/仙童
2026+
D-PAKTO-252
54558
百分百原装现货 实单必成 欢迎询价
FAIRCHILD/仙童
21+
D-PAKTO-252
30000
优势供应 实单必成 可13点增值税
FAIRCILD
22+
TO-252
8000
原装正品支持实单
FAIRCHIL
2023+
TO-252
50000
原装现货
FSC
24+
TO-252
5000
只做原装正品现货 欢迎来电查询15919825718
仙童
06+
TO-252
12000
原装库存

FDD3580芯片相关品牌

FDD3580数据表相关新闻