N-Channel UltraFET Trench MOSFET 100V, 44A, 28m?

Features • rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=44A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =28mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 40 A RDS(ON)

N 沟道，UltraFET® Trench MOSFET，100V，44A，28mΩ

N-Channel 100-V (D-S) MOSFET

文件：984.84 Kbytes Page：8 Pages

N-Channel MOSFET

Application | « Reverse Battery protection | Load switch « Power management « PWM Application |

P-Channel PowerTrench짰 MOSFET -40V, -14A, 64m廓

文件：431.6 Kbytes Page：7 Pages

N-Channel UltraFET Trench MOSFET 100V, 44A, 28m廓

文件：117.19 Kbytes Page：6 Pages

N 沟道，UltraFET® Trench MOSFET，100V，44A，28mΩ

Audio signal processor IC for HiFi VCR incorporating EIAJ sound multiplex system

■ Features • Built-in EIAJ sound multiplex decoder • Full adjustment-free by SIF signal input • fO automatic adjustment of high precision VCO • Built-in pre/recording amplifier

Nylon PCB Supports - Imperial Spacing

文件：115.67 Kbytes Page：1 Pages

RAST-5-Steckverbinder, Raster 5,0 mm

文件：90.21 Kbytes Page：2 Pages

RAST 5 connectors, pitch 5.0 mm

文件：406.08 Kbytes Page：3 Pages

1.6A Dynamic Battery Charger and Power Manager

文件：3.91993 Mbytes Page：27 Pages