Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mOHM P-Channel: -80V, -9.4A, 190mOHM

General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features Q1: N-Channel

Dual N & P-Channel PowerTrench® MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ

Features Q1: N-Channel Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A 100% UIL Tested RoHS Compliant General Description These dual

双 N 和 P 沟道 PowerTrench® MOSFET，80V

CMOS IC

DESCRIPTION The UTC 3510is designed to provide protection circuits, power good output (PGO) indicator, fault protection output (FPO) and a PSON control for PC switching power supply systems. The protection circuits include over voltage protection (OVP) monitoring for 3.3V, 5V and 12V (12V via V

200 V - 1,000 V Three Phase Bridge 40.0 A - 60.0 A Forward Current 70 ns - 3000 ns Recovery Time

40.0 A - 60.0 A Forward Current 70 ns - 3000 ns Recovery Time

RAST-2.5-Steckverbinder, Raster 2,5/5,0 mm

RAST-2.5-Steckverbinder, Raster 2,5/5,0 mm RAST 2.5 connectors, pitch 2.5/5.0 mm Connecteurs RAST 2.5, pas 2,5/5,0 mm

PC POWER SUPPLY SUPERVISORS

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3/8 Square Drive Sockets, SAE

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