80V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 10 A, 80 V. RDS(ON) = 20 mΩ @ VGS = 10 V RDS(ON) = 23 mΩ @ VGS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=43A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance -RDS(on) =20mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 40 A RDS(ON)

80V N-Channel PowerTrench MOSFET

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80V N-Channel PowerTrench MOSFET

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Ceramic Stand-off Insulators for RF-Equipment

Ceramic Stand-off Insulators for RF-Equipment MATERIAL:    Stand - off insulator elements made from Class 1 Ceramic    material (C 221-IEC 60672-3), body completely glazed.    Connection terminals: brass OPERATING CONDITIONS:    Maximum operating temperature + 100 °C    Maximum compressive

High-Speed-Messung und Frequenzsweep- Modus in einem kompakten Messger채t

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RAST 2.5 connectors, pitch 2.5/5.0 mm

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1.5A Buck Converter, 1.5A Boost Converter and LDO Controller

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RAST-2.5-Power-Steckverbinder, Raster 5,0 mm

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