General Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

Q1: N-Channel

■ Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A

■ Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A

Q2: P-Channel

■ Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A

■ Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A

■ 100 UIL Tested

■ RoHS Compliant

Applications

■ Inverter

■ H-Bridge