General Description

This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management.

Features

■ –6.7 A, –12 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 41 mΩ @ VGS = –2.5 V RDS(ON) = 90 mΩ @ VGS = –1.8 V

■ Fast switching speed

■ High performance trench technology for extremely low RDS(ON)

■ High power and current handling capability

Applications

■ DC/DC converter