20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14.7A@ TC=25℃ ·Drain Source Voltage -VDSS=20V(Min) ·Static Drain-Source On-Resistance -RDS(on) =9mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

P-channel Enhancement Mode Power MOSFET

Features  VDS= -20V, ID= -100A RDS(ON)

N 沟道，PowerTrench® MOSFET，20V，50A，9mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极点和低RDS(ON)、快速开关和超低RDS(ON)进行了优化，采用小型封装。 •-50 A，-20V。\n•RDS(ON) = 9 mΩ @ VGS = 10 V\n•RDS(ON) = 11 mΩ @ VGS = 4.5 V\n•RDS(ON) = 16 mΩ（VGS = -2.5V）\n•低栅极电荷（16nC，典型值）\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON);

Dual Output Driver

Description Block Diagram The CS3706 integrated circuit provides an interface between lowl-evel TTL inputs and high-power switching devices such as power MOSFETs. A typical application is single-ended PWM control to pushpull power control conversion. Features ■ Dual 1.5A Totem Pole Outputs ■ 4

20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

NPN (GENERAL PURPOSE TRANSISTOR)

GENERAL PURPOSE AMPLIFIER • Collector-Emitter Voltage: VCEO=20V • Collector Dissipation: Pc Imax)=625mW

Dual Output Driver

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