General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

• 34 A, 100 V. RDS(ON) = 32 mΩ @ VGS = 10 V

RDS(ON) = 35 mΩ @ VGS = 6 V

• Low gate charge (57 nC typical)

• Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability