isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，UniFETTM II，500 V，3 A，2.5 Ω，DPAK

Power MOSFET

文件：1.07861 Mbytes Page：9 Pages

N-Channel MOSFET 500V, 2.5A, 2.5?

文件：550.45 Kbytes Page：8 Pages

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

N-Channel MOSFET 500V, 2.5A, 2.5?

文件：550.45 Kbytes Page：8 Pages

Power MOSFET

文件：1.07853 Mbytes Page：9 Pages

Fast Switching

• FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 3.0Ω (Max) • Fast Switching • APPLICATIONS • Switching power supplies,converters,AC and DC motor controls

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

3A, 500V N-CHANNEL POWER MOSFET

文件：181.85 Kbytes Page：6 Pages

3 Amps, 500 Volts N-CHANNEL POWER MOSFET

文件：173.79 Kbytes Page：6 Pages