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BSC0价格

参考价格：￥6.9676

型号：BSC009NE2LS 品牌：Infineon 备注：这里有BSC0多少钱，2025年最近7天走势，今日出价，今日竞价，BSC0批发/采购报价，BSC0行情走势销售排行榜，BSC0报价。

型号	功能描述	生产厂家企业	LOGO
BSC005N03LS5	OptiMOSTM 5 Power-Transistor, 30 V Features • Very low on-resistance Rusian 0 V6s=4,5 V • Ootimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance « Nuchannel • 100 avalanche tested • Po-free lead plating; RoHS compliant • Halogen-free acoording to IEC61249-2-24	Infineon 英飞凌	Infineon
BSC005N03LS5	MOSFET OptiMOSTM 5 Power-Transistor, 30 V Features • Very low on-resistance RDS(on) @ VGS=4.5 V • Optimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance • N-channel • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-	Infineon 英飞凌	Infineon
BSC005N03LS5	OptiMOSTM5Power-Transistor,30V Features •Verylowon-resistanceRDS(on)@VGS=4.5V •Optimizedchargesforfastswitching •OptimizedQGD/QGSforinducedturnonruggedness •Superiorthermalresistance •N-channel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21	Infineon 英飞凌	Infineon
BSC005N03LS5_V01	MOSFET OptiMOSTM 5 Power-Transistor, 30 V Features • Very low on-resistance RDS(on) @ VGS=4.5 V • Optimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance • N-channel • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-	Infineon 英飞凌	Infineon
BSC005N03LS5ATMA1	MOSFET OptiMOSTM 5 Power-Transistor, 30 V Features • Very low on-resistance RDS(on) @ VGS=4.5 V • Optimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance • N-channel • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-	Infineon 英飞凌	Infineon
BSC005N03LS5ATMA1	OptiMOSTM5Power-Transistor,30V Features •Verylowon-resistanceRDS(on)@VGS=4.5V •Optimizedchargesforfastswitching •OptimizedQGD/QGSforinducedturnonruggedness •Superiorthermalresistance •N-channel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21	Infineon 英飞凌	Infineon
BSC007N04LS6SC	OptiMOSTM 6 Power-Transistor, 40 V Features • Dual-side cooled package with lowest junction-top thermal resistance • Optimized for synchronous application • Very low on-resistance RDS(on) • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61	Infineon 英飞凌	Infineon
BSC009N04LSSC	OptiMOSTM Power-MOSFET, 40 V Features • Dual-side cooled package with lowest junction-top thermal resistance • Optimized for sychronous rectification • 175 °C rated • Very low on-resistance RDS(on) • 100 avalanche tested • Superior thermal resistance • N-channel, logic level • Pb-free lead plating; RoHS compliant • H	Infineon 英飞凌	Infineon
BSC009NE2LS5I	isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current--ID=100A@ TC=25℃ ·Drain Source Voltage--VDSS= 25V(Min) APPLICATIONS ·Synchronous Rectification in SMPS ·UPS ·Motor Control	ISC 无锡固电	ISC
BSC010NE2LS	OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Very low on-resistance R DS(on) @ V GS=4.5 V • 100 avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according	Infineon 英飞凌	Infineon
BSC010NE2LS	isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=100A@ TC=25℃ ·Drain Source Voltage- VDSS= 80V(Min) APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver ·Power Tools ·UPS ·Motor Control	ISC 无锡固电	ISC
BSC010NE2LS_13	OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Very low on-resistance R DS(on) @ V GS=4.5 V • 100 avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according	Infineon 英飞凌	Infineon
BSC012N06NS	OptiMOSTM5 Power-Transistor, 60 V Features • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel • 175°C rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Higher solder joint reliability due to enlarged source interconnection	Infineon 英飞凌	Infineon
BSC014N03LS	OptiMOS?? Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avala	Infineon 英飞凌	Infineon
BSC014N03LSG	OptiMOS?? Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avala	Infineon 英飞凌	Infineon
BSC014N04LS	OptiMOSTM Power-MOSFET, 40 V Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjoin	Infineon 英飞凌	Infineon
BSC014N04LS_16	OptiMOSTM Power-MOSFET, 40 V Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjoin	Infineon 英飞凌	Infineon
BSC016N03LSG	OptiMOS?? Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avala	Infineon 英飞凌	Infineon
BSC016N06NSSC	OptiMOSTM Power-MOSFET, 60 V Features • Double side cooled package-with lowest Juntion-top thermal resistance • 175°C rated • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • High	Infineon 英飞凌	Infineon
BSC019N06NS	OptiMOSTMPower-Transistor,60V Features •Optimizedforsynchronousrectification •175°Crated •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsou	Infineon 英飞凌	Infineon
BSC019N06NSATMA1	OptiMOSTMPower-Transistor,60V Features •Optimizedforsynchronousrectification •175°Crated •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsou	Infineon 英飞凌	Infineon
BSC020N03LSG	OptiMOS?? Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc	Infineon 英飞凌	Infineon
BSC020N03LSG-TP	N-Channel Enhancement MOSFET Application o Load switch « High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate « DCIDC Power Supplies	TECHPUBLIC 台舟电子	TECHPUBLIC
BSC020N03MSG	OptiMOS?? M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 Avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications	Infineon 英飞凌	Infineon
BSC022N03	OptiMOS2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance	Infineon 英飞凌	Infineon
BSC022N03S	OptiMOS2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance	Infineon 英飞凌	Infineon
BSC022N03SG	OptiMOS?? Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • Logic level / N-channel • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance	Infineon 英飞凌	Infineon
BSC023N08NS5SC	OptiMOSTM 5 Power-Transistor, 80 V Features • Dual-side cooled package with lowest Junction-top thermal resistance • Optimized for synchronous rectification in server and desktop • 100 avalanche tested • Superior thermal resistance • N-channel • 175°C rated • Pb-free lead plating; RoHS compliant • Halogen-free according to	Infineon 英飞凌	Infineon
BSC025N03LS	OptiMOS?? Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc	Infineon 英飞凌	Infineon
BSC025N03LSG	OptiMOS?? Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc	Infineon 英飞凌	Infineon
BSC025N03MS	OptiMOS?? M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications	Infineon 英飞凌	Infineon
BSC025N03MSG	OptiMOS?? M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications	Infineon 英飞凌	Infineon
BSC025N03MSG-TP	N-Channel 30V(D-S) Enhancement MOSFET Application i & Load/Power switch \| Interfacing, logic switching «Battery management for ultra protable * electronics \|	TECHPUBLIC 台舟电子	TECHPUBLIC
BSC025N08LS5	OptiMOSTM 5 Power-Transistor, 80 V Features • Optimized for high performance SMPS, e.g. sync. Rec. • 100 avalanche tested • Superior thermal resistance • N-channel, logic level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21	Infineon 英飞凌	Infineon
BSC028N06LS3	OptiMOS3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, logic level • 100 avalanche tested • Pb-free plating; RoHS c	Infineon 英飞凌	Infineon
BSC028N06LS3G	OptiMOS3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, logic level • 100 avalanche tested • Pb-free plating; RoHS c	Infineon 英飞凌	Infineon
BSC028N06NSSC	OptiMOSTM Power-Transistor, 60 V Features • Dual-side cooled package with lowest Junction-top thermal resistance • 175°C rated • Optimized for high performance SMPS, e.g. sync. rec. • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-	Infineon 英飞凌	Infineon
BSC0302LS	MOSFET OptiMOSTM 3 Power-Transistor, 120 V Features • N-channel, logic level • 100 avalanche tested • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Ideal for high-frequency switching and synchronous rectification • Halogen-free	Infineon 英飞凌	Infineon
BSC0303LS	OptiMOSTM 3 Power-Transistor, 120 V Features • N-channel, logic level • 100 avalanche tested • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Ideal for high-frequency switching and synchronous rectification • Halogen-free	Infineon 英飞凌	Infineon
BSC030N03LSG	OptiMOS?? Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc	Infineon 英飞凌	Infineon
BSC030N03MSG	OptiMOS?? M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 avalanche tested • N-channel • Very low on-resistance RDS(on) @ VGS=4.5V • Excellent gate charge x RDS(on) product (FOM) • Qualified according to JEDEC1) for target applications •	Infineon 英飞凌	Infineon
BSC030N08NS5-TP	N-Channel Enhancement Mode MOSFET Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge	TECHPUBLIC 台舟电子	TECHPUBLIC
BSC030N10NS5SC	OptiMOSTM 5 Power-Transistor, 100 V Features • Dual-side cooled package with lowest junction-top thermal resistance • 175°C rated • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21	Infineon 英飞凌	Infineon
BSC033N08NS5SC	OptiMOSTM 5 Power-Transistor, 80 V Features • Dual-side cooled package with lowest Junction-top thermal resistance • Optimized for synchronous rectification in server and desktop • 100 avalanche tested • Superior thermal resistance • N-channel • 175°C rated • Pb-free lead plating; RoHS compliant • Halogen-free according to	Infineon 英飞凌	Infineon
BSC034N03	N-Ch 30V Fast Switching MOSFETs Features Advanced Trench MOS Technology Low Gate Charge Low RDS(ON) 100 EAS Guaranteed Green Device Available Applications Power Management in Desktop Computer or DC/DC Converters. Isolated DC/DC Converters in Telecom and Industrial.	EVVOSEMI 翊欧	EVVOSEMI
BSC034N03LSG	OptiMOS?? Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc	Infineon 英飞凌	Infineon
BSC034N10LS5	OptiMOSTM 5 Power-Transistor, 100 V Features • Optimized for high performance SMPS, e.g. sync. Rec. • 100 avalanche tested • Superior thermal resistance • N-channel, logic level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21	Infineon 英飞凌	Infineon
BSC037N08NS5	Superior thermal resistance Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21	Infineon 英飞凌	Infineon
BSC037N08NS5-TP	N-Channel Enhancement Mode MOSFET Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge	TECHPUBLIC 台舟电子	TECHPUBLIC
BSC040N08NS5	Superior thermal resistance Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21	Infineon 英飞凌	Infineon
BSC042N03LSG	OptiMOS?? Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc	Infineon 英飞凌	Infineon
BSC042N03MSG	OptiMOS?? Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 Avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications	Infineon 英飞凌	Infineon
BSC042N03MSG	Synchronous Buck Controller GENERAL DESCRIPTION The ADP1878/ADP1879 are versatile current-mode, synchronous step-down controllers. They provide superior transient response, optimal stability, and current-limit protection by using a constant on time, pseudo fixed frequency with a programmable current-limit, current control s	AD 亚德诺	AD
BSC042N03S	OptiMOS2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance	Infineon 英飞凌	Infineon
BSC042N03SG	OptiMOS?? Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • Logic level / N-channel • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance	Infineon 英飞凌	Infineon
BSC047N08NS3	OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS	Infineon 英飞凌	Infineon
BSC047N08NS3G	OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS	Infineon 英飞凌	Infineon
BSC047N08NS3G_12	OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS	Infineon 英飞凌	Infineon
BSC047N08NS3G-TP	N-Channel Enhancement Mode MOSFET Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge	TECHPUBLIC 台舟电子	TECHPUBLIC
BSC004NE2LS5	OptiMOS5 Power-Transistor, 25 V 文件：2.16389 Mbytes Page：12 Pages	Infineon 英飞凌	Infineon

BSC0产品属性

类型
描述
型号
BSC0
功能描述
MOSFET N-CH 25V 41A TDSON-8
RoHS
是
类别
分离式半导体产品 >> FET - 单
系列
OptiMOS™
标准包装
1,000
系列
MESH OVERLAY™ FET
型
MOSFET N 通道，金属氧化物 FET
特点
逻辑电平门
漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
C
18A 开态Rds（最大）@ Id, Vgs @ 25°
C
180 毫欧 @ 9A，10V Id 时的
Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
Vgs
72nC @ 10V 输入电容(Ciss) @
Vds
1560pF @ 25V 功率 -
最大
40W
安装类型
通孔
封装/外壳
TO-220-3 整包
供应商设备封装
TO-220FP
包装
管件

BSC0供应商更多...

更新时间：2025-12-25 18:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	BSC005N03LS5I	Infineon(英飞凌)	24+	标准封装	10048	原厂渠道供应,大量现货,原型号开票。	询价
深圳市星宇佳科技有限公司	BSC005N03LS5IATMA1	Infineon(英飞凌)	20+	PG-TDSON-8-FL	5000		询价
深圳市煦洪科技有限公司	BSC005N03LS5	Infineon/英飞凌	25+	原厂封装	10280	原厂授权代理,专注军工、汽车、医疗、工业、新能源！	询价
深圳市星辰微电科技有限公司	BSC005N03LS5I	Infineon	23+	PG-TDSON-8	15500	英飞凌优势渠道全系列在售	询价
深圳市得捷芯城科技有限公司	BSC005N03LS5	Infineon(英飞凌)	24+	-	22048	原厂可订货,技术支持,直接渠道。可签保供合同	询价
柒号芯城电子商务(深圳)有限公司	BSC005N03LS5	INFINEON	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市中联芯电子有限公司	BSC005N03LS5IATMA1	Infineon	24+	PG-TDSON-8	9000	只做原装正品有挂有货假一赔十	询价
天津市博通航睿技术有限公司	BSC005N03LS5IATMA1	INFINEON			2		询价
深圳市安富世纪电子有限公司	BSC005N03LS5	INFINEON	23+	TDSON-8	6740	专注配单,只做原装进口现货	询价
万三科技(深圳)有限公司	BSC005N03LS5ATMA1	Infineon(英飞凌)	25+	TDSON-8FL	500000	源自原厂成本,高价回收工厂呆滞	询价

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2019-12-16
BSC016N04LSG
BSC016N04LSG 深圳市拓亿芯电子有限公司，专业代理，分销世界名牌电子元器件，是一家专业化，品牌化的电子元器件，质量第一，诚信经营。
2019-3-7

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DdatasheetPDF页码索引