丝印代码：028N06SC；OptiMOSTM Power-Transistor, 60 V

Features • Dual-side cooled package with lowest Junction-top thermal resistance • 175°C rated • Optimized for high performance SMPS, e.g. sync. rec. • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-

OptiMOS ™ 5 60 V 功率 MOSFET 采用 SuperSO8 DSC 封装，具有双面冷却功能，可增强热性能

\n优势:\nImproved heat dissipation\nSuperior thermal resistance\nDrop-in replacement in designs using SuperSO8 package\nLow conduction and switching losses;

OptiMOSTM3 Power-Transistor

文件：567.65 Kbytes Page：9 Pages

New OptiMOS??40V and 60V

文件：1.02174 Mbytes Page：2 Pages

丝印代码：028N06NS；OptiMOSTM Power-Transistor, 60 V

文件：1.12279 Mbytes Page：12 Pages

OptiMOS3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, logic level • 100 avalanche tested • Pb-free plating; RoHS c