位置：首页 > IC中文资料第3977页 > BSC047N08NS3
BSC047N08NS3价格
参考价格：￥6.4758
型号：BSC047N08NS3G 品牌：INFINEON 备注：这里有BSC047N08NS3多少钱，2026年最近7天走势，今日出价，今日竞价，BSC047N08NS3批发/采购报价，BSC047N08NS3行情走势销售排行榜，BSC047N08NS3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BSC047N08NS3 | OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS | INFINEON 英飞凌 |   | |
丝印代码：047N08NS；OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS | INFINEON 英飞凌 | | ||
OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS | INFINEON 英飞凌 | | ||
N-Channel Enhancement Mode MOSFET Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge | TECHPUBLIC 台舟电子 | | ||
N 沟道功率 MOSFET | INFINEON 英飞凌 | | ||
丝印代码：047N08NS；OptiMOS3 Power-Transistor 文件：327.01 Kbytes Page：9 Pages | INFINEON 英飞凌 | |
BSC047N08NS3产品属性
- 类型
描述
- 型号
BSC047N08NS3
- 功能描述
MOSFET OptiMOS3 PWR-MOSFET N-CH
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEONTECHNOLOGIES/IR |
24+ |
TDSON-8 |
160381 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
22+ |
TDSON8 |
15000 |
原装优质现货订货渠道商 |
|||
Infineon(英飞凌) |
25+ |
8-PowerTDFN |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
INFINEON |
24+ |
TDSON8 |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON |
25+ |
TDSON8 |
6000 |
全新原装现货、诚信经营! |
|||
INFINEON/英飞凌 |
2025+ |
TDSON-8 |
3141 |
原装进口价格优 请找坤融电子! |
|||
英飞凌 |
23+ |
N/A |
10000 |
正规渠道,只有原装! |
|||
INFINEON |
23+ |
DTSON8 |
5000 |
英飞凌汽车电子优势 |
|||
INFINEON |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON/英飞凌 |
23+ |
5000 |
现货现货现货,滚动式排单供货 |
BSC047N08NS3芯片相关品牌
BSC047N08NS3规格书下载地址
BSC047N08NS3参数引脚图相关
- ca121
- c960
- c903
- c9012
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- BSH101
- BSF-C75
- BSF-C70
- BSF-108
- BSD840N
- BSD340N
- BSD235N
- BSD235C
- BSD223P
- BSD22
- BSD03C
- BSCD84H
- BSCD56H
- BSCD54H
- BSCD52H
- BSCD36H
- BSCD34H
- BSCD32H
- BSCD26H
- BSCD22H
- BSC061N08NS5ATMA1
- BSC060P03NS3EGATMA1
- BSC060P03NS3EG
- BSC060N10NS3G
- BSC059N04LSG
- BSC057N08NS3G
- BSC057N03MSG
- BSC057N03LSG
- BSC054N04NSGATMA1
- BSC054N04NSG
- BSC052N08NS5ATMA1
- BSC052N03LSATMA1
- BSC052N03LS
- BSC050NE2LS
- BSC050N04LSGATMA1
- BSC050N04LSG
- BSC050N03MSG
- BSC050N03LSG
- BSC047N08NS3GATMA1
- BSC047N08NS3G
- BSC046N10NS3GATMA1
- BSC046N10NS3G
- BSC046N02KSG
- BSC042NE7NS3G
- BSC042N03MSG
- BSC042N03LSG
- BSC040N10NS5ATMA1
- BSC040N08NS5ATMA1
- BSC039N06NSATMA1
- BSC039N06NS
- BSC037N08NS5ATMA1
- BSC036NE7NS3GATMA1
- BSC036NE7NS3G
- BSC035N10NS5ATMA1
- BSC035N04LSGATMA1
- BSC035N04LSG
- BSC034N03LSG
- BSC032NE2LS
- BSC031N06NS3G
- BSC030P03NS3G
- BSBE2
- BSAKIT
- BS-AG21
- BS-AD41
- BSAC5.0
- BS-AA21
- BSA5W
- BSA45C
- BSA450C
- BSA440C
- BSA406C
- BSA40
- BSA220C
- BSA150C
- BSA150B
- BSA132B
- BSA118B
- BS933
- BS903
- BS8-SE
BSC047N08NS3数据表相关新闻
BSC040N10NS5
进口代理
2024-4-24BSC057N08NS3G
BSC057N08NS3G
2023-4-10BSC047N08NS3G全新原装特价销售MOSFET
BSC047N08NS3G全新原装特价销售MOSFET
2022-10-27BSC039N06NS
BSC039N06NS 集成电路、处理器、微控制器 INFINEON/英飞凌 封装TSDSON-8
2022-8-1BSC047N08NS3G 封装PG-TDSON-8场效应管(MOSFET)
BSC047N08NS3G
2022-4-20BSC040N10NS5晶体管原装现货
型号：BSC040N10NS5 制造商: Infineon 产品种类: MOSFET RoHS: 详细信息 技术: Si 安装风格: SMD/SMT 封装 / 箱体: PG-TDSON-8 通道数量: 1 Channel 晶体管极性: N-Channel Vds-漏源极击穿电压: 100 V Id-连续漏极电流: 100 A Rds On-漏源导通电阻: 4 mOhms Vgs - 栅极-源极电压: 10 V Vgs th-
2019-12-7
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
