丝印代码：010NE2LS；OptiMOSTM Power-MOSFET

Features • Optimized for high performance Buck converter • Very low on-resistance R DS(on) @ V GS=4.5 V • 100 avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=100A@ TC=25℃ ·Drain Source Voltage- VDSS= 80V(Min) APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver ·Power Tools ·UPS ·Motor Control

N 沟道功率 MOSFET

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the \n优势:\n• Save overall system costs by reducing the number of phases in multiphase converters\n• Reduce power losses and increase efficiency for all load conditions\n• Save space with smallest packages like CanPAK™, S3O8 or system in package solution\n• Minimize EMI in the system making external snub;

n-Channel Power MOSFET

文件：1.53756 Mbytes Page：12 Pages

OptiMOSTM Power-MOSFET

Features • Optimized for high performance Buck converter • Very low on-resistance R DS(on) @ V GS=4.5 V • 100 avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according

20V-300V N-Channel Power MOSFET

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the \n优势:\n• Save overall system costs by reducing the number of phases in multiphase converters\n• Reduce power losses and increase efficiency for all load conditions\n• Save space with smallest packages like CanPAK™, S3O8 or system in package solution\n• Minimize EMI in the system making external snub;

n-Channel Power MOSFET

文件：1.61674 Mbytes Page：12 Pages

Material Content Data Sheet

文件：33.42 Kbytes Page：1 Pages

OptiMOSTM Power-MOSFET, 25 V

文件：1.40649 Mbytes Page：12 Pages

Material Content Data Sheet

文件：33.42 Kbytes Page：1 Pages

OptiMOSTM Power-MOSFET, 25 V

文件：1.40649 Mbytes Page：12 Pages