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BLF8价格
参考价格：￥629.8406
型号：BLF861A 品牌：ASI 备注：这里有BLF8多少钱，2026年最近7天走势，今日出价，今日竞价，BLF8批发/采购报价，BLF8行情走势销售排行榜，BLF8报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BLF8 | Axial Lead and Cartridge Fuses - Midget 文件：78.82 Kbytes Page：1 Pages | Littelfuse 力特 |   | |
surface Mountable RFI Filters Tyco Electronics introduces a new line of surface mountable RFI filters specifically designed to eliminate noise on the signal line. These board level filters attenuate noise on the signal line at the frequency range of 10 MHz to 1000 MHz with maximum attenuation at 40 MHz to 400 MHz. BLF Serie | MACOM | | ||
UHF power LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolator | Philips 飞利浦 | | ||
UHF power LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed to withstand abrupt load mismatch | Philips 飞利浦 | | ||
UHF POWER LDMOS TRANSISTOR DESCRIPTION: The ASI BLF861A ia a Silicon N-channel enhancement mode lateral D-MOS push-pull transistor. FEATURES: • Internal input-output matching • Omnigold™ Metalization System | ASI | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed to withstand abrupt load mismatch | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
UHF power LDMOS transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. F | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. F | Ampleon 安谱隆 | | ||
UHF power LDMOS transistor General description A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital | Ampleon 安谱隆 | | ||
UHF power LDMOS transistor General description A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital | Ampleon 安谱隆 | | ||
UHF power LDMOS transistor General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits Excellent ruggedness Optimum the | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits Excellent ruggedness Optimum thermal beh | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits Excellent ruggedness Optimum the | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits Excellent ruggedness Optimum thermal beh | Ampleon 安谱隆 | | ||
UHF power LDMOS transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ■ Excellent ruggedness (VSWR ≥ 40 : 1 through a | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits Excellent ruggedness (VSWR 40 : 1 through | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ■ Excellent ruggedness (VSWR ≥ 40 : 1 through a | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits Excellent ruggedness (VSWR 40 : 1 through | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits Excellent ruggedness Optimum thermal beh | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power LDMOS transistor General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits Excellent ruggedness Optimum thermal beh | Ampleon 安谱隆 | | ||
UHF power LDMOS transistor General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits High efficiency High power gain Excellent ruggedness (VSW | Ampleon 安谱隆 | | ||
UHF power LDMOS transistor General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits High efficiency High power gain Excellent ruggedness (VSW | Ampleon 安谱隆 | | ||
UHF power LDMOS transistor General description A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 150 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits Design | Ampleon 安谱隆 | | ||
UHF power LDMOS transistor General description A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 150 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits Design | Ampleon 安谱隆 | | ||
UHF power LDMOS transistor General description A 900 W LDMOS RF power transistor for broadcast Doherty, class AB transmitter and ISM applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits Designed for symmetric and asymmetric Doherty | Ampleon 安谱隆 | | ||
UHF power LDMOS transistor General description A 900 W LDMOS RF power transistor for broadcast Doherty, class AB transmitter and ISM applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits Designed for symmetric and asymmetric Doherty | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Power LDMOS transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | |
BLF8产品属性
- 类型
描述
- 型号
BLF8
- 制造商
LITTELFUSE
- 制造商全称
Littelfuse
- 功能描述
Axial Lead and Cartridge Fuses - Midget
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AMPHENOL/安费诺 |
2508+ |
/ |
209858 |
一级代理，原装现货 |
|||
恩XP |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
2025+ |
SMD |
3000 |
原装进口价格优 请找坤融电子! |
|||
PHI |
21+ |
SMD |
10000 |
勤思达只做原装 现货库存 支持支持实单 |
|||
恩XP |
19+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-59 |
|||
SEMICON |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
|||
恩XP |
18+ |
TO-59 |
460 |
专注高频管 欢迎来询 |
|||
恩XP |
2021+ |
SOT1120B |
9450 |
原装现货。 |
|||
恩XP |
24+ |
标准封装 |
7258 |
全新原装正品/价格优惠/质量保障 |
|||
恩XP |
25+ |
SMD |
6500 |
十七年专营原装现货一手货源,样品免费送 |
BLF8规格书下载地址
BLF8参数引脚图相关
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- BLF888A,112
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- BLF881,112
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- BLF7G27LS-90P,112
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- BLF7G24LS-140,112
- BLF7G24LS-100,112
- BLF7G22LS-130,112
- BLF7G22L-200,118
- BLF7G20LS-200,118
- BLF7G20L-90P,112
- BLF7G20L-250P,112
- BLF7G15LS-200,112
- BLF7G10LS-250,118
- BLF6H10LS-160,112
- BLF6G38S-25,112
- BLF6G38LS-50,112
- BLF6G38LS-100,112
- BLF6G38-25,112
- BLF6G38-100,112
- BLF6G27S-45,112
- BLF6G27-45,112
- BLF6G27-10G,112
- BLF647P
- BLF647
- BLF645
- BLF642
- BLF61/4
- BLF6.25
- BLF578
- BLF574
- BLF573S
- BLF573
- BLF571
- BLF548
- BLF547
- BLF546
- BLF545
- BLF544B
- BLF544
- BLF543
- BLF542
- BLF522
BLF8数据表相关新闻
BLM15EG121SN1D
原装代理
2022-8-17BLM15PX121SN1D
BLM15PX121SN1D
2022-5-24BLM15AX601SN1D
BLM15AX601SN1D
2021-8-23BLF6G22LS-130 BLF6G22LS-130全新原装现货
BLF6G22LS-130，全新原装现货0755-82732291当天发货或门市自取.
2020-12-4BLF6G38LS-100
BLF6G38LS-100
2020-4-22BLF7G27LS-140
射频功率放大器 NXP BLF系列 进口原装现货 深圳市达恩科技有限公司 电话：0755-83256279 刘小姐：13510619928/微信同号，QQ:3171516190
2019-9-23
DdatasheetPDF页码索引
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