UHF power LDMOS transistor

RF Manual 16th edition

UHF power LDMOS transistor

文件：173.97 Kbytes Page：17 Pages

UHF power LDMOS transistor

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness (VSWR  40 : 1 through

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ■ Excellent ruggedness (VSWR ≥ 40 : 1 through a

RF Manual 16th edition

RF Manual 16th edition

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ■ Excellent ruggedness (VSWR ≥ 40 : 1 through a

RF Manual 16th edition

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness (VSWR  40 : 1 through

UHF power LDMOS transistor

A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.\n\n \n\nWhitepaper Doherty Architectures in UHF\n\nThis White Paper explains different PA arch Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)\nOptimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W\nSuitable for CW UHF and ISM applications\nHigh power gain\nHigh efficiency\nDesigned for broadband operation (470 MHz to 860 MHz)\nInternal input matching for high gain and optimum;

UHF power LDMOS transistor

General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness  Optimum thermal beh

RF Manual 16th edition

RF Manual 16th edition

RF Manual 16th edition

UHF power LDMOS transistor

General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness  Optimum thermal beh

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  High efficiency  High power gain  Excellent ruggedness (VSW

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  High efficiency  High power gain  Excellent ruggedness (VSW

UHF power LDMOS transistor

General description A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 150 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Design

UHF power LDMOS transistor

General description A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 150 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Design

UHF power LDMOS transistor

文件：173.97 Kbytes Page：17 Pages

UHF power LDMOS transistor

封装/外壳：SOT-539A 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF FET LDMOS 110V 21DB SOT539A 分立半导体产品 晶体管 - FET，MOSFET - 射频

UHF power LDMOS transistor

文件：525.22 Kbytes Page：17 Pages

封装/外壳：SOT-539B 包装：托盘 描述：RF FET LDMOS 110V 21DB SOT539B 分立半导体产品 晶体管 - FET，MOSFET - 射频

UHF power LDMOS transistor

文件：865 Kbytes Page：17 Pages

UHF power LDMOS transistor

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