BLF888价格

参考价格:¥1528.9450

型号:BLF888,112 品牌:NXP 备注:这里有BLF888多少钱,2025年最近7天走势,今日出价,今日竞价,BLF888批发/采购报价,BLF888行情走势销售排行榜,BLF888报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BLF888

UHF power LDMOS transistor

ETC

知名厂家

BLF888

RF Manual 16th edition

ETC

知名厂家

BLF888

UHF power LDMOS transistor

文件:173.97 Kbytes Page:17 Pages

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ■ Excellent ruggedness (VSWR ≥ 40 : 1 through a

Philips

飞利浦

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness (VSWR  40 : 1 through

AmpleonAmpleon USA Inc.

安谱隆

RF Manual 16th edition

ETC

知名厂家

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness (VSWR  40 : 1 through

AmpleonAmpleon USA Inc.

安谱隆

RF Manual 16th edition

ETC

知名厂家

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ■ Excellent ruggedness (VSWR ≥ 40 : 1 through a

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

UHF power LDMOS transistor

General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness  Optimum thermal beh

AmpleonAmpleon USA Inc.

安谱隆

RF Manual 16th edition

ETC

知名厂家

UHF power LDMOS transistor

General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness  Optimum thermal beh

AmpleonAmpleon USA Inc.

安谱隆

RF Manual 16th edition

ETC

知名厂家

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  High efficiency  High power gain  Excellent ruggedness (VSW

AmpleonAmpleon USA Inc.

安谱隆

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  High efficiency  High power gain  Excellent ruggedness (VSW

AmpleonAmpleon USA Inc.

安谱隆

UHF power LDMOS transistor

General description A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 150 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Design

AmpleonAmpleon USA Inc.

安谱隆

UHF power LDMOS transistor

General description A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 150 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Design

AmpleonAmpleon USA Inc.

安谱隆

UHF power LDMOS transistor

文件:173.97 Kbytes Page:17 Pages

Philips

飞利浦

封装/外壳:SOT-539A 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:RF FET LDMOS 110V 21DB SOT539A 分立半导体产品 晶体管 - FET,MOSFET - 射频

AmpleonAmpleon USA Inc.

安谱隆

UHF power LDMOS transistor

文件:525.22 Kbytes Page:17 Pages

Philips

飞利浦

封装/外壳:SOT-539B 包装:托盘 描述:RF FET LDMOS 110V 21DB SOT539B 分立半导体产品 晶体管 - FET,MOSFET - 射频

AmpleonAmpleon USA Inc.

安谱隆

UHF power LDMOS transistor

文件:865 Kbytes Page:17 Pages

Philips

飞利浦

UHF power LDMOS transistor

文件:160.82 Kbytes Page:12 Pages

Philips

飞利浦

Surface mount inductors

Features • Low profile (1.5mm typ. Height) and 3.3mm square • Ideal for IC inverter EL lamp driver applications • Available on tape and reel for auto-insertion • Suitable for reflow solding

Toko

Model 888,887 18&20 pin Dual In-Line Thick Film Resistor Network

文件:225.55 Kbytes Page:2 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

Female mini-plus cordset

文件:133.86 Kbytes Page:3 Pages

ALLEN-BRADLEY

Female mini-plus cordset

文件:133.86 Kbytes Page:3 Pages

ALLEN-BRADLEY

Female mini-plus cordset

文件:133.86 Kbytes Page:3 Pages

ALLEN-BRADLEY

BLF888产品属性

  • 类型

    描述

  • 型号

    BLF888

  • 功能描述

    射频MOSFET电源晶体管 500W, 470-860MHz

  • RoHS

  • 制造商

    Freescale Semiconductor

  • 配置

    Single

  • 频率

    1800 MHz to 2000 MHz

  • 增益

    27 dB

  • 输出功率

    100 W

  • 封装/箱体

    NI-780-4

  • 封装

    Tray

更新时间:2025-8-16 11:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
23+
50000
全新原装正品现货,支持订货
恩XP
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
恩XP
25+
4
原装正品,假一罚十!
Ampleon USA Inc.
22+
CDFM2
9000
原厂渠道,现货配单
恩XP
18+
SOT539A
12500
全新原装正品,本司专业配单,大单小单都配
恩XP
2511
8790
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
恩XP
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
恩XP
2019+
SMD
6992
原厂渠道 可含税出货
恩XP
24+
SOT-539A
43200
郑重承诺只做原装进口现货
恩XP
24+
SOT-539A
9600
原装现货,优势供应,支持实单!

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