UHF power LDMOS transistor

General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness  Optimum the

RF Manual 16th edition

UHF power LDMOS transistor

General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness  Optimum thermal beh

UHF power LDMOS transistor

A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Excellent ruggedness\nOptimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W\nHigh power gain\nHigh efficiency\nDesigned for broadband operation (470 MHz to 860 MHz)\nInternal input matching for high gain and optimum broadband operation\nExcellent reliability\nEasy power control\nCompliant to;

封装/外壳：SOT-1121B 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF FET LDMOS 104V 21DB SOT1121B 分立半导体产品 晶体管 - FET，MOSFET - 射频

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