UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ■ Excellent ruggedness (VSWR ≥ 40 : 1 through a

RF Manual 16th edition

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness (VSWR  40 : 1 through

UHF power LDMOS transistor

UHF power LDMOS transistor

A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.\n\n \n\nWhitepaper Doherty Architectures in UHF\n\nThis White Paper explains different PA arch Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)\nOptimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W\nSuitable for CW UHF and ISM applications\nHigh power gain\nHigh efficiency\nDesigned for broadband operation (470 MHz to 860 MHz)\nInternal input matching for high gain and optimum;

封装/外壳：SOT-539B 包装：托盘 描述：RF FET LDMOS 110V 21DB SOT539B 分立半导体产品 晶体管 - FET，MOSFET - 射频

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