UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ■ Excellent ruggedness (VSWR ≥ 40 : 1 through a

RF Manual 16th edition

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness (VSWR  40 : 1 through

封装/外壳：SOT-539B 包装：托盘 描述：RF FET LDMOS 110V 21DB SOT539B 分立半导体产品 晶体管 - FET，MOSFET - 射频

Surface mount inductors

Features • Low profile (1.5mm typ. Height) and 3.3mm square • Ideal for IC inverter EL lamp driver applications • Available on tape and reel for auto-insertion • Suitable for reflow solding

Model 888,887 18&20 pin Dual In-Line Thick Film Resistor Network

文件：225.55 Kbytes Page：2 Pages

Female mini-plus cordset

文件：133.86 Kbytes Page：3 Pages

Female mini-plus cordset

文件：133.86 Kbytes Page：3 Pages

Female mini-plus cordset

文件：133.86 Kbytes Page：3 Pages