UHF power LDMOS transistor

General description A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 150 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Design

UHF power LDMOS transistor

General description A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 150 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Design

封装/外壳：SOT-539B 包装：托盘 描述：RF FET LDMOS 104V 17DB SOT539B 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SOT-539A 包装：散装 描述：RF FET LDMOS 104V 17DB SOT539A 分立半导体产品 晶体管 - FET，MOSFET - 射频

Surface mount inductors

Features • Low profile (1.5mm typ. Height) and 3.3mm square • Ideal for IC inverter EL lamp driver applications • Available on tape and reel for auto-insertion • Suitable for reflow solding

Model 888,887 18&20 pin Dual In-Line Thick Film Resistor Network

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Female mini-plus cordset

文件：133.86 Kbytes Page：3 Pages

Female mini-plus cordset

文件：133.86 Kbytes Page：3 Pages

Female mini-plus cordset

文件：133.86 Kbytes Page：3 Pages