UHF power LDMOS transistor

General description A 900 W LDMOS RF power transistor for broadcast Doherty, class AB transmitter and ISM applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Designed for symmetric and asymmetric Doherty

UHF power LDMOS transistor

UHF power LDMOS transistor

General description A 900 W LDMOS RF power transistor for broadcast Doherty, class AB transmitter and ISM applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Designed for symmetric and asymmetric Doherty

UHF power LDMOS transistor

封装/外壳：SOT-539B 包装：管件 描述：RF MOSFET LDMOS 50V SOT539B 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SOT-539A 包装：管件 描述：RF MOSFET LDMOS 50V SOT539A 分立半导体产品 晶体管 - FET，MOSFET - 射频

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