UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  High efficiency  High power gain  Excellent ruggedness (VSW

UHF power LDMOS transistor

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.\n\n \n\nWhitepaper Doherty Architectures in UHF\n\nThis White Paper explains different PA architectures which can • High efficiency\n• High power gain\n• Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)\n• Excellent thermal stability\n• Integrated ESD protection\n• One Doherty design covers the full bandwidth from 470 MHz to 860 MHz\n• Internal input matching for ease of use\n• Compliant to Directive 200;

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