UHF power LDMOS transistor

General description A 900 W LDMOS RF power transistor for broadcast Doherty, class AB transmitter and ISM applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Designed for symmetric and asymmetric Doherty

UHF power LDMOS transistor

封装/外壳：SOT-539B 包装：管件 描述：RF MOSFET LDMOS 50V SOT539B 分立半导体产品 晶体管 - FET，MOSFET - 射频

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895A, BD897A and BD899A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A

UHF linear power transistor

DESCRIPTION NPN silicon planar transistor in a SOT171A 6-lead rectangular flange package, with a ceramic cap. The transistor delivers a Po sync = 3 W in class-A operation at 860 MHz and a supply voltage of 25 V. FEATURES • Internal input matching for wideband operation and high power ga

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850–960 MHz. • Motorola Advanced Amplifier Concept Package • Specified 24 Volt, 900 MHz Characteristi