General description

A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Features and benefits

 Excellent ruggedness

 Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W

 High power gain

 High efficiency

 Designed for broadband operation (470 MHz to 860 MHz)

 Internal input matching for high gain and optimum broadband operation

 Excellent reliability

 Easy power control

 Compliant to Restriction ofHazardous Substances (RoHS) Directive 2002/95/EC

Applications

 Communication transmitter applications in the UHF band

 Industrial applications in the UHF band