UHF power LDMOS transistor

General description A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital

UHF power LDMOS transistor

A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. Theexcellent ruggedness and broadband performance of this device makes it ideal for digitaltransmitter applications. Integrated ESD protection\nExcellent ruggedness\nHigh power gain\nHigh efficiency\nExcellent reliability\nEasy power control\nCompliant to Directive 2002/95/EC, regarding restriction of hazardous substances(RoHS);

封装/外壳：SOT-502B 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF FET LDMOS 104V 20.6DB SOT502B 分立半导体产品 晶体管 - FET，MOSFET - 射频

NPN (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING)

AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING Complement to KSB772

Audio Frequency Power Amplifier

Featuers • Low Speed Switcing • Complement to KSB772. Recommended Applications • Audio Frequency Power Amplifier

Audio Frequency Power Amplifier

Featuers • Low Speed Switcing • Complement to KSB772. Recommended Applications • Audio Frequency Power Amplifier

Audio Frequency Power Amplifier

Featuers • Low Speed Switcing • Complement to KSB772. Recommended Applications • Audio Frequency Power Amplifier

Round.Top View Type

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