RF Manual 16th edition

UHF power LDMOS transistor

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UHF power LDMOS transistor

封装/外壳：SOT-539A 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF FET LDMOS 104V 21DB SOT539A 分立半导体产品 晶体管 - FET，MOSFET - 射频

UHF power LDMOS transistor

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封装/外壳：SOT-539B 包装：托盘 描述：RF FET LDMOS 104V 21DB SOT539B 分立半导体产品 晶体管 - FET，MOSFET - 射频

NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage

● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 (PNP)

NPN Darlington transistors

DESCRIPTION NPN Darlington transistor in a TO-92 (SOT54) plastic package. PNP complement: BC878. FEATURES • High DC current gain (min. 1000) • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Relay drivers.

NPN SILICON PLANAR DARLINGTON TRANSISTORS

NPN Silicon Planar Darlington Transistors BD875, BD877 and BD879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package (12 A 3 DIN 41869, sheet 4). These darlington transistors are designed for relay drivers as well as for general AF applications. BD876 BD878 and BD880

SILICON NPN EPITAXIAL TYPE TRANSISTOR

Description For 1.5V And 3V Electronic Flash Use. Features • Charger-up time is about 1 mS faster than of a germanium transistor. • Small saturation voltage can bring less power dissipation and flashing times.

SILICON NPN EPITAXIAL TYPE TRANSISTOR

Description For 1.5V and 3v electronic flash use. Features • Charger-up time is about 1 ms faster than of a germanium transistor • Small saturation voltage can bring less power dissipation and flashing times